Development and application of instrumental methods for strain analysis of semiconductor layers and devices

Papadimitriou, D; Liarokapis, E; Richter, W

dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Richter, W	en
dc.date.accessioned	2014-03-01T02:41:51Z
dc.date.available	2014-03-01T02:41:51Z
dc.date.issued	2001	en
dc.identifier.issn	0026-3672	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30627
dc.subject	Semiconductor devices	en
dc.subject	Semiconductor layers	en
dc.subject	Strain analysis	en
dc.subject.classification	Chemistry, Analytical	en
dc.subject.other	germanium	en
dc.subject.other	silicon	en
dc.subject.other	accuracy	en
dc.subject.other	chemical structure	en
dc.subject.other	conference paper	en
dc.subject.other	device	en
dc.subject.other	optical instrumentation	en
dc.subject.other	Raman spectrometry	en
dc.subject.other	reflectometry	en
dc.subject.other	semiconductor	en
dc.subject.other	spectroscopy	en
dc.subject.other	spectrum	en
dc.subject.other	structure analysis	en
dc.title	Development and application of instrumental methods for strain analysis of semiconductor layers and devices	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1007/s006040170048	en
heal.identifier.secondary	http://dx.doi.org/10.1007/s006040170048	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	Strain effects on semiconductor layers were studied by means of optical spectroscopic techniques with a device developed especially for the study of layered structures and microstructures. Raman, modulated photoreflectance and reflectance anisotropy spectroscopy (RAS) were applied. Measurements were performed on elemental semiconductors (Si), semiconductor alloys (Si-Ge) and III-V semiconductor compounds (GaAs). By application of RAS, strains lower than 10(-4) could be resolved, which is at least one order of magnitude lower than those observable with Raman and modulated reflectance techniques. The RAS spectra of layers strained along either the [010] or [011] direction showed a derivative-like structure at El-gap energies, which increased linearly and very quickly with increasing strain. The dependence of this spectral feature on applied strain was used to evaluate strain-dependent effects. This behaviour strongly suggests that RAS can be applied for the optical characterisation of strain in semiconductor microstructures and devices, with a higher efficiency and accuracy than that achieved by previously established optical methods such as Raman and modulation spectroscopy. In addition, the compactness and ease of operation of the instrumentation of RAS provides considerable potential for in situ monitoring/control of semiconductor fabrication conditions.	en
heal.publisher	SPRINGER-VERLAG WIEN	en
heal.journalName	Mikrochimica Acta	en
dc.identifier.doi	10.1007/s006040170048	en
dc.identifier.isi	ISI:000169798600012	en
dc.identifier.volume	136	en
dc.identifier.issue	3-4	en
dc.identifier.spage	165	en
dc.identifier.epage	169	en