Tin oxide APCVD thin films grown by SnCl4 oxidation on glass and Si substrates in a cold wall reactor

Koutsogianni, A; Tsamakis, D

dc.contributor.author	Koutsogianni, A	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T02:42:02Z
dc.date.available	2014-03-01T02:42:02Z
dc.date.issued	2001	en
dc.identifier.issn	1155-4339	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30735
dc.subject	Chemical vapor deposition (CVD)	en
dc.subject	Cold wall reactor	en
dc.subject	Electrical resistivity	en
dc.subject	Gas sensors	en
dc.subject	Thin films	en
dc.subject	Tin-oxide (SnO2)	en
dc.subject.classification	Physics, Multidisciplinary	en
dc.subject.other	Atmospheric pressure	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Glass	en
dc.subject.other	Grain size and shape	en
dc.subject.other	Morphology	en
dc.subject.other	Oxidation	en
dc.subject.other	Substrates	en
dc.subject.other	Thermal effects	en
dc.subject.other	Thin films	en
dc.subject.other	Tin compounds	en
dc.subject.other	Cold wall reactors	en
dc.subject.other	Film growth	en
dc.title	Tin oxide APCVD thin films grown by SnCl4 oxidation on glass and Si substrates in a cold wall reactor	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1051/jp4:2001348	en
heal.identifier.secondary	http://dx.doi.org/10.1051/jp4:2001348	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	Tin oxide films were grown by Chemical Vapor Deposition (CVD) on glass and Si substrates at atmospheric pressure (AP) and temperatures varying between 430 and 580 degreesC in a cold wall orizontal reactor, radiatevelly heated, by oxidation of SnCl4 vapors with O-2. The structure of SnO2 thin films has been studied by X-ray diffraction and their surface morphology by Scanning Electronic Microscopy. It was shown that films have a grain size that increases with temperature from 0.1 to 0.50nm as the temperature of deposition increases from 430 to 580 degreesC. It was also shown that that they present very good uniformity at temperatures between 450 and 480 degreesC. Electrical resistivity measurements have been performed in the temperature range 300-600K. The most conductive films were obtained at 480 degreesC. Furthermore, these films exhibited the highest transmission, of the order of 80%. In this case the minimum resistivity value is about 1.6.10(-3)Omega .cm. Tin oxide films present no base and they also exhibit high transmission in the visible range, larger than 80%.	en
heal.publisher	E D P SCIENCES	en
heal.journalName	Journal De Physique. IV : JP	en
dc.identifier.doi	10.1051/jp4:2001348	en
dc.identifier.isi	ISI:000171140300049	en
dc.identifier.volume	11	en
dc.identifier.issue	3	en
dc.identifier.spage	Pr3377	en
dc.identifier.epage	Pr3383	en