Effect of ion implantation on the structural properties of a-Si:H films

Danesh, P; Pantchev, B; Savatinova, I; Liarokapis, E; Schmidt, B

dc.contributor.author	Danesh, P	en
dc.contributor.author	Pantchev, B	en
dc.contributor.author	Savatinova, I	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Schmidt, B	en
dc.date.accessioned	2014-03-01T02:42:06Z
dc.date.available	2014-03-01T02:42:06Z
dc.date.issued	2002	en
dc.identifier.issn	0042-207X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30786
dc.subject	Hydrogenated amorphous silicon	en
dc.subject	Infrared spectroscopy	en
dc.subject	Ion implantation	en
dc.subject	Mechanical stress	en
dc.subject	Raman spectroscopy	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Amorphous silicon	en
dc.subject.other	Compressive stress	en
dc.subject.other	Hydrogen bonds	en
dc.subject.other	Infrared spectroscopy	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Thin films	en
dc.subject.other	Hydrogenated amorphous silicon	en
dc.subject.other	Ion implantation	en
dc.title	Effect of ion implantation on the structural properties of a-Si:H films	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0042-207X(02)00311-1	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0042-207X(02)00311-1	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	A comparative study of the effect of H+ and Si+ ion implantation on hydrogenated amorphous silicon (a-Si:H) has been carried out, in order to explore the interaction of hydrogen with the structural defects and to separate their contribution to the intrinsic compressive stress in the films. a-Si:H films were prepared by plasma-enhanced chemical vapour deposition. Raman scattering spectroscopy and infrared spectroscopy have been used to study the variations of the short-range order of the silicon network and of the hydrogen bonding configuration, respectively. It has been suggested that the essential difference in the structural damage introduced by H+ and Si+ ion implantation could be related with the insertion of molecular hydrogen. (C) 2002 Elsevier Science Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Vacuum	en
dc.identifier.doi	10.1016/S0042-207X(02)00311-1	en
dc.identifier.isi	ISI:000180739000011	en
dc.identifier.volume	69	en
dc.identifier.issue	1-3	en
dc.identifier.spage	83	en
dc.identifier.epage	86	en