Electron irradiation of a-Si:H films prepared from hydrogen-diluted silane

Danesh, P; Pantchev, B; Savatinova, I; Liarokapis, E; Kaschieva, S; Belov, AG

dc.contributor.author	Danesh, P	en
dc.contributor.author	Pantchev, B	en
dc.contributor.author	Savatinova, I	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Kaschieva, S	en
dc.contributor.author	Belov, AG	en
dc.date.accessioned	2014-03-01T02:42:07Z
dc.date.available	2014-03-01T02:42:07Z
dc.date.issued	2002	en
dc.identifier.issn	0042-207X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30789
dc.subject	Electron irradiation	en
dc.subject	Hydrogenated amorphous silicon	en
dc.subject	Optoelectronic properties	en
dc.subject	Radiation defects	en
dc.subject	Raman spectroscopy	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Amorphous silicon	en
dc.subject.other	Electron irradiation	en
dc.subject.other	Photoconductivity	en
dc.subject.other	Silanes	en
dc.subject.other	Radiation defects	en
dc.subject.other	Thin films	en
dc.title	Electron irradiation of a-Si:H films prepared from hydrogen-diluted silane	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0042-207X(02)00310-X	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0042-207X(02)00310-X	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	The effect of 18 MeV electron irradiation on the optoelectronic and structural properties of a-Si:H films has been studied. It has been established that the irradiation leads to a strong decrease of photo- and dark conductivities, causes a change in the state distribution of the valence band-tail, as well as in the recombination mechanism of the photoexcited carriers. The structural properties of the films have been studied by means of Raman spectroscopy. The observed change in the short and medium-range order of the amorphous silicon network suggests that the high-energy electron irradiation induces structural defects, as well. (C) 2002 Elsevier Science Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Vacuum	en
dc.identifier.doi	10.1016/S0042-207X(02)00310-X	en
dc.identifier.isi	ISI:000180739000010	en
dc.identifier.volume	69	en
dc.identifier.issue	1-3	en
dc.identifier.spage	79	en
dc.identifier.epage	82	en