Epitaxial ErSi2-x on strained and relaxed Si1-xGex

Travlos, A; Apostolopoulos, G; Boukos, N; Katiniotis, Ch; Tsamakis, D

dc.contributor.author	Travlos, A	en
dc.contributor.author	Apostolopoulos, G	en
dc.contributor.author	Boukos, N	en
dc.contributor.author	Katiniotis, Ch	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T02:42:07Z
dc.date.available	2014-03-01T02:42:07Z
dc.date.issued	2002	en
dc.identifier.issn	0921-5107	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30791
dc.subject	Epitaxy	en
dc.subject	Erbium silicide	en
dc.subject	Silicon germanium	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Crystal lattices	en
dc.subject.other	Epitaxial growth	en
dc.subject.other	High temperature effects	en
dc.subject.other	Semiconducting silicon compounds	en
dc.subject.other	Substrates	en
dc.subject.other	Erbium silicides	en
dc.subject.other	Erbium compounds	en
dc.title	Epitaxial ErSi2-x on strained and relaxed Si1-xGex	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0921-5107(01)00835-2	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0921-5107(01)00835-2	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	We study for the first time the epitaxial growth of ErSi2-x on strained and relaxed Si1-xGex substrates, as well as its structural properties. Epitaxy of ErSi2-x is achieved at a temperature of 550 degreesC after the reaction of a very thin Er/Si template layer. ErSi2-x grows in the tetragonal phase, which has been previously observed for epitaxial growth on Si at higher temperatures. ErSi2-x layers grown on relaxed Si1-xGex exhibit a higher crystal quality, due to the reduction of the lattice mismatch with increasing Ge content. (C) 2002 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	en
dc.identifier.doi	10.1016/S0921-5107(01)00835-2	en
dc.identifier.isi	ISI:000174015300081	en
dc.identifier.volume	89	en
dc.identifier.issue	1-3	en
dc.identifier.spage	382	en
dc.identifier.epage	385	en