Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures

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dc.contributor.author Tsamakis, D en
dc.contributor.author Sargentis, Ch en
dc.contributor.author Apostolopoulos, G en
dc.contributor.author Boukos, N en
dc.date.accessioned 2014-03-01T02:42:07Z
dc.date.available 2014-03-01T02:42:07Z
dc.date.issued 2002 en
dc.identifier.issn 0921-5107 en
dc.identifier.uri http://hdl.handle.net/123456789/30797
dc.subject Epitaxy en
dc.subject Hall mobility en
dc.subject MBE en
dc.subject Strained SiGe en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Electric conductivity en
dc.subject.other Hall effect en
dc.subject.other Molecular beam epitaxy en
dc.subject.other Semiconducting silicon compounds en
dc.subject.other Semiconductor doping en
dc.subject.other X ray diffraction analysis en
dc.subject.other Hall measurements en
dc.subject.other Heterojunctions en
dc.title Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures en
heal.type conferenceItem en
heal.identifier.primary 10.1016/S0921-5107(01)00859-5 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0921-5107(01)00859-5 en
heal.language English en
heal.publicationDate 2002 en
heal.abstract Electrical resistivity and Hall measurements have been performed, on strained B-heavily doped Si0.8Ge0.2 epilayers grown by molecular beam epitaxy (MBE) technique, in the temperature range 80-350 K. In-plane Hall mobility and concentration of the free holes were extracted and discussed taking into account the high doping level effects, scattering mechanisms as well as previous drift mobility results. (C) 2002 Elsevier Science B.V. All rights reserved. en
heal.publisher ELSEVIER SCIENCE SA en
heal.journalName Materials Science and Engineering B: Solid-State Materials for Advanced Technology en
dc.identifier.doi 10.1016/S0921-5107(01)00859-5 en
dc.identifier.isi ISI:000174015300047 en
dc.identifier.volume 89 en
dc.identifier.issue 1-3 en
dc.identifier.spage 221 en
dc.identifier.epage 224 en

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