Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures

Tsamakis, D; Sargentis, Ch; Apostolopoulos, G; Boukos, N

dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Apostolopoulos, G	en
dc.contributor.author	Boukos, N	en
dc.date.accessioned	2014-03-01T02:42:07Z
dc.date.available	2014-03-01T02:42:07Z
dc.date.issued	2002	en
dc.identifier.issn	0921-5107	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30797
dc.subject	Epitaxy	en
dc.subject	Hall mobility	en
dc.subject	MBE	en
dc.subject	Strained SiGe	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Hall effect	en
dc.subject.other	Molecular beam epitaxy	en
dc.subject.other	Semiconducting silicon compounds	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	X ray diffraction analysis	en
dc.subject.other	Hall measurements	en
dc.subject.other	Heterojunctions	en
dc.title	Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0921-5107(01)00859-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0921-5107(01)00859-5	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	Electrical resistivity and Hall measurements have been performed, on strained B-heavily doped Si0.8Ge0.2 epilayers grown by molecular beam epitaxy (MBE) technique, in the temperature range 80-350 K. In-plane Hall mobility and concentration of the free holes were extracted and discussed taking into account the high doping level effects, scattering mechanisms as well as previous drift mobility results. (C) 2002 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	en
dc.identifier.doi	10.1016/S0921-5107(01)00859-5	en
dc.identifier.isi	ISI:000174015300047	en
dc.identifier.volume	89	en
dc.identifier.issue	1-3	en
dc.identifier.spage	221	en
dc.identifier.epage	224	en