High frequency operation of a MOSFET under an integrated inductor's magnetic field

Nastos, N; Papananos, Y

dc.contributor.author	Nastos, N	en
dc.contributor.author	Papananos, Y	en
dc.date.accessioned	2014-03-01T02:42:07Z
dc.date.available	2014-03-01T02:42:07Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30798
dc.subject	High Frequency	en
dc.subject	Integrated Circuit	en
dc.subject	Magnetic Field	en
dc.subject.other	Active devices	en
dc.subject.other	High frequency operation	en
dc.subject.other	Integrated inductors	en
dc.subject.other	Measurement results	en
dc.subject.other	MOS transistors	en
dc.subject.other	MOS-FET	en
dc.subject.other	Silicon surfaces	en
dc.subject.other	Magnetic fields	en
dc.subject.other	MOS devices	en
dc.subject.other	Transistor transistor logic circuits	en
dc.subject.other	Electric inductors	en
dc.title	High frequency operation of a MOSFET under an integrated inductor's magnetic field	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICECS.2002.1046244	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICECS.2002.1046244	en
heal.identifier.secondary	1046244	en
heal.publicationDate	2002	en
heal.abstract	In this paper the feasibility of placing integrated inductors over active devices and in particular MOS transistors is investigated. By this way we can minimize the silicon surface occupied by integrated circuits making them more compact and economic. To the best of our knowledge there is no relevant work still published. Next we present the structure we have designed, preliminary measurement results and possible applications. © 2002 IEEE.	en
heal.journalName	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems	en
dc.identifier.doi	10.1109/ICECS.2002.1046244	en
dc.identifier.volume	2	en
dc.identifier.spage	615	en
dc.identifier.epage	618	en