Roughness characterization in positive and negative resists

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dc.contributor.author Constantoudis, V en
dc.contributor.author Gogolides, E en
dc.contributor.author Tserepi, A en
dc.contributor.author Diakoumakos, CD en
dc.contributor.author Valamontes, ES en
dc.date.accessioned 2014-03-01T02:42:09Z
dc.date.available 2014-03-01T02:42:09Z
dc.date.issued 2002 en
dc.identifier.issn 0167-9317 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/30820
dc.subject Correlation length en
dc.subject Fractal dimension en
dc.subject Metrology en
dc.subject Resists en
dc.subject Roughness en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.classification Nanoscience & Nanotechnology en
dc.subject.classification Optics en
dc.subject.classification Physics, Applied en
dc.subject.other Characterization en
dc.subject.other Correlation methods en
dc.subject.other Frequencies en
dc.subject.other Roughness measurement en
dc.subject.other Spectrum analysis en
dc.subject.other Surface roughness en
dc.subject.other Roughness parameters en
dc.subject.other Photoresists en
dc.title Roughness characterization in positive and negative resists en
heal.type conferenceItem en
heal.identifier.primary 10.1016/S0167-9317(02)00424-0 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0167-9317(02)00424-0 en
heal.language English en
heal.publicationDate 2002 en
heal.abstract Different roughness parameters, such as the root mean square deviation (rms or sigma), the correlation length L-cor, the fractal dimension D and the Fourier spectrum, are presented and compared. The scaling behavior of sigma determining the L-cor as well as the dependence of sigma and D on the exposure dose for two negative tone (wet- and plasma-developed) and one positive tone resist are investigated. The experimental analysis reveals an interesting interrelation (inverse behavior) between sigma and D which is not predicted by theory, and elucidates the dependence of L-cor on the exposure dose. (C) 2002 Elsevier Science B.V. All rights reserved. en
heal.publisher ELSEVIER SCIENCE BV en
heal.journalName Microelectronic Engineering en
dc.identifier.doi 10.1016/S0167-9317(02)00424-0 en
dc.identifier.isi ISI:000176594700110 en
dc.identifier.volume 61-62 en
dc.identifier.spage 793 en
dc.identifier.epage 801 en

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