Roughness characterization in positive and negative resists

Constantoudis, V; Gogolides, E; Tserepi, A; Diakoumakos, CD; Valamontes, ES

dc.contributor.author	Constantoudis, V	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Tserepi, A	en
dc.contributor.author	Diakoumakos, CD	en
dc.contributor.author	Valamontes, ES	en
dc.date.accessioned	2014-03-01T02:42:09Z
dc.date.available	2014-03-01T02:42:09Z
dc.date.issued	2002	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30820
dc.subject	Correlation length	en
dc.subject	Fractal dimension	en
dc.subject	Metrology	en
dc.subject	Resists	en
dc.subject	Roughness	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Characterization	en
dc.subject.other	Correlation methods	en
dc.subject.other	Frequencies	en
dc.subject.other	Roughness measurement	en
dc.subject.other	Spectrum analysis	en
dc.subject.other	Surface roughness	en
dc.subject.other	Roughness parameters	en
dc.subject.other	Photoresists	en
dc.title	Roughness characterization in positive and negative resists	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0167-9317(02)00424-0	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(02)00424-0	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	Different roughness parameters, such as the root mean square deviation (rms or sigma), the correlation length L-cor, the fractal dimension D and the Fourier spectrum, are presented and compared. The scaling behavior of sigma determining the L-cor as well as the dependence of sigma and D on the exposure dose for two negative tone (wet- and plasma-developed) and one positive tone resist are investigated. The experimental analysis reveals an interesting interrelation (inverse behavior) between sigma and D which is not predicted by theory, and elucidates the dependence of L-cor on the exposure dose. (C) 2002 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(02)00424-0	en
dc.identifier.isi	ISI:000176594700110	en
dc.identifier.volume	61-62	en
dc.identifier.spage	793	en
dc.identifier.epage	801	en