Study of the irradiation damage in SiC by ion channeling

Kokkoris, M; Kossionides, S; Kyriakis, A; Zachariadou, K; Fanourakis, G; Vlastou, R; Paradellis, Th

dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Kossionides, S	en
dc.contributor.author	Kyriakis, A	en
dc.contributor.author	Zachariadou, K	en
dc.contributor.author	Fanourakis, G	en
dc.contributor.author	Vlastou, R	en
dc.contributor.author	Paradellis, Th	en
dc.date.accessioned	2014-03-01T02:42:09Z
dc.date.available	2014-03-01T02:42:09Z
dc.date.issued	2002	en
dc.identifier.issn	0168-583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30826
dc.subject	Backscattering	en
dc.subject	Channeling	en
dc.subject	Lely	en
dc.subject	Lithium	en
dc.subject	RBS	en
dc.subject	SiC crystal	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.classification	Physics, Atomic, Molecular & Chemical	en
dc.subject.classification	Physics, Nuclear	en
dc.subject.other	Amorphization	en
dc.subject.other	Backscattering	en
dc.subject.other	Crystals	en
dc.subject.other	Ion beams	en
dc.subject.other	Radiation damage	en
dc.subject.other	Semiconducting silicon compounds	en
dc.subject.other	Silicon carbide	en
dc.subject.other	Spectrum analysis	en
dc.subject.other	Ion channeling	en
dc.subject.other	Irradiation damage	en
dc.subject.other	Ion bombardment	en
dc.title	Study of the irradiation damage in SiC by ion channeling	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0168-583X(01)01022-9	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(01)01022-9	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	The importance of silicon carbide as a wide band gap semiconductor is widely accepted and well documented. Its excellent physical properties (chemical inertness, high-temperature strength, low thermal expansion, extreme hardness) make it the most promising substitute for traditional semiconductors. especially when high-temperature, high-voltage power. and high-frequency devices are concerned. In the present work. the gradual amorphization of a SiC Lely (21 R) crystal hen irradiated with 8 MeV Li-7 ions in a random direction up to a maximum dose of approximately 1 x 10(16) particles/cm(2). is being Studied. using the progressive change of channeling parameters for different depths. The results refer to the energy region of similar to1 MeV/nucleon. and an attempt is made in order to explain the peculiarities of the experimental spectra and the mechanism of defect production in SiC. As in previous studies. a change in color was observed after irradiation in the random mode, indicating that the problem of irradiation damage in SiC caused by light ion be beams needs further investigation. (C) 2002 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(01)01022-9	en
dc.identifier.isi	ISI:000175364300013	en
dc.identifier.volume	188	en
dc.identifier.issue	1-4	en
dc.identifier.spage	78	en
dc.identifier.epage	83	en