Effects of annealing atmosphere and substrate on the photoluminescence and Raman scattering from Si nanocrystals in a SiO2 matrix

Bineva, I; Nesheva, D; Aneva, Z; Levi, Z; Raptis, C; Hofmeister, H; Stavrev, S

dc.contributor.author	Bineva, I	en
dc.contributor.author	Nesheva, D	en
dc.contributor.author	Aneva, Z	en
dc.contributor.author	Levi, Z	en
dc.contributor.author	Raptis, C	en
dc.contributor.author	Hofmeister, H	en
dc.contributor.author	Stavrev, S	en
dc.date.accessioned	2014-03-01T02:42:14Z
dc.date.available	2014-03-01T02:42:14Z
dc.date.issued	2003	en
dc.identifier.issn	0957-4522	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30886
dc.subject	High Resolution Electron Microscopy	en
dc.subject	Raman Scattering	en
dc.subject	Thin Film	en
dc.subject	Fill Factor	en
dc.subject	Radiative Recombination	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Annealing	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Raman scattering	en
dc.subject.other	Silica	en
dc.subject.other	Silicon	en
dc.subject.other	Vacuum applications	en
dc.subject.other	Thermal evaporation	en
dc.subject.other	Nanostructured materials	en
dc.title	Effects of annealing atmosphere and substrate on the photoluminescence and Raman scattering from Si nanocrystals in a SiO2 matrix	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1023/A:1026113506580	en
heal.identifier.secondary	http://dx.doi.org/10.1023/A:1026113506580	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	Thin films of SiOx have been prepared on quartz or c-Si substrates by thermal evaporation of SiO in vacuum and post-annealed at 1373 Kin an argon or hydrogen atmosphere. High-resolution electron microscopy has shown the existence of silicon nanocrystals in the annealed films, and this result has been confirmed by Raman scattering. Photoluminescence has been observed from annealed films and attributed to radiative recombination in Si nanocrystals. Its intensity is appreciably higher upon annealing in Ar than in H-2. It is shown that substrates strongly affect the Raman scattering from Si nanocrystals in nc-Si-SiO2 thin films with low filling factors. (C) 2003 Kluwer Academic Publishers.	en
heal.publisher	KLUWER ACADEMIC PUBL	en
heal.journalName	Journal of Materials Science: Materials in Electronics	en
dc.identifier.doi	10.1023/A:1026113506580	en
dc.identifier.isi	ISI:000185962400062	en
dc.identifier.volume	14	en
dc.identifier.issue	10-12	en
dc.identifier.spage	799	en
dc.identifier.epage	800	en