Growth and p-type doping of ZnSeTe on InP

Strassburg, M; Strassburg, M; Schulz, O; Pohl, UW; Hoffmann, A; Bimberg, D; Kontos, AG; Raptis, YS

dc.contributor.author	Strassburg, M	en
dc.contributor.author	Strassburg, M	en
dc.contributor.author	Schulz, O	en
dc.contributor.author	Pohl, UW	en
dc.contributor.author	Hoffmann, A	en
dc.contributor.author	Bimberg, D	en
dc.contributor.author	Kontos, AG	en
dc.contributor.author	Raptis, YS	en
dc.date.accessioned	2014-03-01T02:42:15Z
dc.date.available	2014-03-01T02:42:15Z
dc.date.issued	2003	en
dc.identifier.issn	0022-0248	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30894
dc.subject	A1. p-Type doping	en
dc.subject	A3. Metalorganic vapor phase epitaxy	en
dc.subject	B1. Phosphorus acceptor	en
dc.subject	B1. ZnSeTe	en
dc.subject	B2. Semiconducting II-VI materials	en
dc.subject.classification	Crystallography	en
dc.subject.other	Composition	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Semiconducting indium phosphide	en
dc.subject.other	Semiconducting zinc compounds	en
dc.subject.other	Phosphorus acceptor	en
dc.subject.other	Metallorganic vapor phase epitaxy	en
dc.title	Growth and p-type doping of ZnSeTe on InP	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0022-0248(02)01893-6	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0022-0248(02)01893-6	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	Metalorganic vapour phase epitaxy and the p-type doping of ZnSeTe layers on InP (1 0 0) using phosphorus acceptors are presented, The influences of molar ratio in the vapour phase and the ZnCdSe buffer are described. The dependence of the free hole concentration on the P incorporation into ZnSeTe and on the composition of the layers is revealed. The p-type conduction is verified by C-V profiling. Best crystalline quality is found for lattice-matched layers. while highest p-type conductivity is achieved with Te-rich layers. Free hole concentrations of 3 x 10(18). and I x 10(17) cm(-3) are obtained for strained and lattice matched ZnSeTe layers. respectively. (C) 2002 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Journal of Crystal Growth	en
dc.identifier.doi	10.1016/S0022-0248(02)01893-6	en
dc.identifier.isi	ISI:000180446900010	en
dc.identifier.volume	248	en
dc.identifier.issue	SUPPL.	en
dc.identifier.spage	50	en
dc.identifier.epage	55	en