Growth and p-type doping of ZnSeTe on InP

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dc.contributor.author Strassburg, M en
dc.contributor.author Strassburg, M en
dc.contributor.author Schulz, O en
dc.contributor.author Pohl, UW en
dc.contributor.author Hoffmann, A en
dc.contributor.author Bimberg, D en
dc.contributor.author Kontos, AG en
dc.contributor.author Raptis, YS en
dc.date.accessioned 2014-03-01T02:42:15Z
dc.date.available 2014-03-01T02:42:15Z
dc.date.issued 2003 en
dc.identifier.issn 0022-0248 en
dc.identifier.uri http://hdl.handle.net/123456789/30894
dc.subject A1. p-Type doping en
dc.subject A3. Metalorganic vapor phase epitaxy en
dc.subject B1. Phosphorus acceptor en
dc.subject B1. ZnSeTe en
dc.subject B2. Semiconducting II-VI materials en
dc.subject.classification Crystallography en
dc.subject.other Composition en
dc.subject.other Doping (additives) en
dc.subject.other Semiconducting indium phosphide en
dc.subject.other Semiconducting zinc compounds en
dc.subject.other Phosphorus acceptor en
dc.subject.other Metallorganic vapor phase epitaxy en
dc.title Growth and p-type doping of ZnSeTe on InP en
heal.type conferenceItem en
heal.identifier.primary 10.1016/S0022-0248(02)01893-6 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0022-0248(02)01893-6 en
heal.language English en
heal.publicationDate 2003 en
heal.abstract Metalorganic vapour phase epitaxy and the p-type doping of ZnSeTe layers on InP (1 0 0) using phosphorus acceptors are presented, The influences of molar ratio in the vapour phase and the ZnCdSe buffer are described. The dependence of the free hole concentration on the P incorporation into ZnSeTe and on the composition of the layers is revealed. The p-type conduction is verified by C-V profiling. Best crystalline quality is found for lattice-matched layers. while highest p-type conductivity is achieved with Te-rich layers. Free hole concentrations of 3 x 10(18). and I x 10(17) cm(-3) are obtained for strained and lattice matched ZnSeTe layers. respectively. (C) 2002 Elsevier Science B.V. All rights reserved. en
heal.publisher ELSEVIER SCIENCE BV en
heal.journalName Journal of Crystal Growth en
dc.identifier.doi 10.1016/S0022-0248(02)01893-6 en
dc.identifier.isi ISI:000180446900010 en
dc.identifier.volume 248 en
dc.identifier.issue SUPPL. en
dc.identifier.spage 50 en
dc.identifier.epage 55 en

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