Integrated inductors over MOSFETS - Experimental results of a three dimensional integrated structure

Nastos, N; Papananos, Y

dc.contributor.author	Nastos, N	en
dc.contributor.author	Papananos, Y	en
dc.date.accessioned	2014-03-01T02:42:16Z
dc.date.available	2014-03-01T02:42:16Z
dc.date.issued	2003	en
dc.identifier.issn	02714310	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30901
dc.subject	Analog Integrated Circuits	en
dc.subject	Three Dimensional	en
dc.subject.other	Integrated circuit layout	en
dc.subject.other	Intermodulation	en
dc.subject.other	Power inductors	en
dc.subject.other	Spectrum analyzers	en
dc.subject.other	Topology	en
dc.subject.other	Integrated inductors	en
dc.subject.other	MOSFET devices	en
dc.title	Integrated inductors over MOSFETS - Experimental results of a three dimensional integrated structure	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISCAS.2003.1205499	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISCAS.2003.1205499	en
heal.publicationDate	2003	en
heal.abstract	In this paper, we introduce a three dimensional topology and present its RF characteristics. This topology consists of a MOSFET transistor positioned underneath an integrated inductor with both elements placed on the same silicon die so as to form a three-dimensional integrated structure. The advantage of this structure is that it uses the vacant area underneath the inductor so as to minimize the actual surface it occupies and make its usage more economic and area efficient for analog integrated circuit design.	en
heal.journalName	Proceedings - IEEE International Symposium on Circuits and Systems	en
dc.identifier.doi	10.1109/ISCAS.2003.1205499	en
dc.identifier.volume	1	en
dc.identifier.spage	I57	en
dc.identifier.epage	I60	en