Integrating the Fluxgate principle in the Spin-Valve and AMR sensor technologies

Dimitropoulos, PD; Avaritsiotis, JN

dc.contributor.author	Dimitropoulos, PD	en
dc.contributor.author	Avaritsiotis, JN	en
dc.date.accessioned	2014-03-01T02:42:16Z
dc.date.available	2014-03-01T02:42:16Z
dc.date.issued	2003	en
dc.identifier.issn	0924-4247	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30902
dc.subject	AMR sensors	en
dc.subject	Fluxgates	en
dc.subject	Magnetometers	en
dc.subject	MEMs	en
dc.subject	Spin-Valves	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.other	Giant magnetoresistance	en
dc.subject.other	Magnetic anisotropy	en
dc.subject.other	Magnetic flux	en
dc.subject.other	Microelectromechanical devices	en
dc.subject.other	Anisotropic magento-resistance (AMR)	en
dc.subject.other	Sensors	en
dc.title	Integrating the Fluxgate principle in the Spin-Valve and AMR sensor technologies	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0924-4247(03)00130-4	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0924-4247(03)00130-4	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	A new kind of magneto-resistive magnetic-field sensors, called hereafter MR-Fluxgates, is being presented in this paper. The sensors employ the general Fluxgate principle together with the anisotropic magneto-resistance (AMR) effect exhibited by AMR film-resistors or the giant magneto-resistance (GMR) effect exhibited by Spin-Valve structures. The AMR film-resistors and the Spin-Valve structures can be used as Fluxgate magnetic cores when excited along their easy magnetic axis with a periodical magnetic field-waveform, generated by a miniature planar coil. In this case, the value of the resistivity (sensor signal) of the AMR film-resistors (or Spin-Valve structures) becomes a rectangular function of time, whose duty-cycle is proportional to the measured field-component. The MR-Fluxgate design allows for suppression of the repeatability error, the time- and temperature- stability errors that limit the precision of AMR and Spin-Valve sensors. Furthermore, the MR-Fluxgate design enables the simultaneous measurement of two perpendicular field-components (i.e. x-y plane), by employment of one-single AMR film-resistor (or Spin-Valve). A complete mathematical modeling of the MR-Fluxgate sensor is presented in this work. A prototype MR-Fluxgate is presented elsewhere. (C) 2003 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Sensors and Actuators, A: Physical	en
dc.identifier.doi	10.1016/S0924-4247(03)00130-4	en
dc.identifier.isi	ISI:000184847600011	en
dc.identifier.volume	106	en
dc.identifier.issue	1-3	en
dc.identifier.spage	43	en
dc.identifier.epage	47	en