Raman study of ion-implanted hydrogenated amorphous silicon

Danesh, P; Pantchev, B; Liarokapis, E; Schmidt, B

dc.contributor.author	Danesh, P	en
dc.contributor.author	Pantchev, B	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Schmidt, B	en
dc.date.accessioned	2014-03-01T02:42:20Z
dc.date.available	2014-03-01T02:42:20Z
dc.date.issued	2003	en
dc.identifier.issn	0957-4522	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30945
dc.subject	Amorphous Silicon	en
dc.subject	Hydrogen Atom	en
dc.subject	Hydrogenated Amorphous Silicon	en
dc.subject	Ion Implantation	en
dc.subject	Raman Spectroscopy	en
dc.subject	Structural Properties	en
dc.subject	Short Range Order	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Chemical bonds	en
dc.subject.other	Crystal structure	en
dc.subject.other	Hydrogenation	en
dc.subject.other	Ion implantation	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Bond length	en
dc.subject.other	Amorphous silicon	en
dc.title	Raman study of ion-implanted hydrogenated amorphous silicon	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1023/A:1026120213424	en
heal.identifier.secondary	http://dx.doi.org/10.1023/A:1026120213424	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	The effect of silicon and hydrogen ion implantations on the structural properties of hydrogenated amorphous silicon films was studied by means of Raman spectroscopy, with the aim of revealing the influence of hydrogen atoms inserted into the silicon matrix on its short-range order. To separate the implantation-induced increase in the structural disorder from the effect of the implanted hydrogen, the implantation doses of silicon and hydrogen ions were selected to create closely similar numbers of host-atom displacements. The results obtained suggest that the presence of hydrogen in amorphous silicon reduces the structural disorder related to variations in the silicon bond length, but affect the bond-angle deviations to a lesser extent. (C) 2003 Kluwer Academic Publishers.	en
heal.publisher	KLUWER ACADEMIC PUBL	en
heal.journalName	Journal of Materials Science: Materials in Electronics	en
dc.identifier.doi	10.1023/A:1026120213424	en
dc.identifier.isi	ISI:000185962400041	en
dc.identifier.volume	14	en
dc.identifier.issue	10-12	en
dc.identifier.spage	753	en
dc.identifier.epage	754	en