A modeling of the optical properties of the zinc oxide-zinc magnesium oxide double barrier system

Krokidis, G; Xanthakis, JP; Iliadis, AA

dc.contributor.author	Krokidis, G	en
dc.contributor.author	Xanthakis, JP	en
dc.contributor.author	Iliadis, AA	en
dc.date.accessioned	2014-03-01T02:42:24Z
dc.date.available	2014-03-01T02:42:24Z
dc.date.issued	2004	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30988
dc.subject	Modeling	en
dc.subject	Optical properties	en
dc.subject	Resonant tunneling	en
dc.subject	Zinc Oxide	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Approximation theory	en
dc.subject.other	Eigenvalues and eigenfunctions	en
dc.subject.other	Electron energy levels	en
dc.subject.other	Electron transitions	en
dc.subject.other	Electron transport properties	en
dc.subject.other	Energy gap	en
dc.subject.other	Optical properties	en
dc.subject.other	Stoichiometry	en
dc.subject.other	Thickness measurement	en
dc.subject.other	Mass equation method	en
dc.subject.other	Modeling	en
dc.subject.other	Tunneling behavior	en
dc.subject.other	Wave functions	en
dc.subject.other	Semiconducting zinc compounds	en
dc.title	A modeling of the optical properties of the zinc oxide-zinc magnesium oxide double barrier system	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.sse.2004.05.064	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sse.2004.05.064	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	We have modeled the optical properties of the ZnMgO/ZnO/ZnMgO system and correlated them to its transport properties by employing an effective mass equation method. By its construction our method was sensitive to the barrier thickness of the system. From our results we deduce that there are more states in the well than resonant tunneling peaks in the transport data. The ""missing"" states in the electrical characteristics are not seen because of their much lower localization in the well. However these states are responsible for the UV activity of the system. Reducing the barrier thickness changes dramatically the localization of the states in the well without affecting significantly the energy levels. Hence the electrical properties can be changed without changing significantly the optical properties. © 2004 Published by Elsevier Ltd.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/j.sse.2004.05.064	en
dc.identifier.isi	ISI:000223809700073	en
dc.identifier.volume	48	en
dc.identifier.issue	10-11 SPEC. ISS.	en
dc.identifier.spage	2099	en
dc.identifier.epage	2102	en