Analysis of harmonic distortion in deep submicron CMOS

Bucher, M; Bazigos, A; Nastos, N; Papananos, Y; Krummenacher, F; Yoshitomi, S

dc.contributor.author	Bucher, M	en
dc.contributor.author	Bazigos, A	en
dc.contributor.author	Nastos, N	en
dc.contributor.author	Papananos, Y	en
dc.contributor.author	Krummenacher, F	en
dc.contributor.author	Yoshitomi, S	en
dc.date.accessioned	2014-03-01T02:42:29Z
dc.date.available	2014-03-01T02:42:29Z
dc.date.issued	2004	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31016
dc.subject	Harmonic Distortion	en
dc.subject	High Frequency	en
dc.subject.other	CMOS integrated circuits	en
dc.subject.other	Computer simulation	en
dc.subject.other	Mathematical models	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Deep submicron CMOS	en
dc.subject.other	High-frequency harmonic distortion	en
dc.subject.other	Harmonic analysis	en
dc.title	Analysis of harmonic distortion in deep submicron CMOS	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICECS.2004.1399701	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICECS.2004.1399701	en
heal.identifier.secondary	TC3.4	en
heal.publicationDate	2004	en
heal.abstract	This paper presents a study of harmonic distortion measurement and modeling in an 0.14um CMOS technology. Measurements and simulation of DC characteristics, as well as high-frequency harmonic distortion are presented. The new EKV3.0 compact MOSFET model is used to model DC and harmonic distortion characteristics. © 2004 IEEE.	en
heal.journalName	11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004	en
dc.identifier.doi	10.1109/ICECS.2004.1399701	en
dc.identifier.spage	395	en
dc.identifier.epage	398	en