Growth of poly crystalline La0.5Sr0.5CoO3 films by femtosecond pulsed laser deposition

Brodoceanu, D; Manousaki, A; Zergioti, I; Klini, A; Dinescu, M; Fotakis, C

dc.contributor.author	Brodoceanu, D	en
dc.contributor.author	Manousaki, A	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Klini, A	en
dc.contributor.author	Dinescu, M	en
dc.contributor.author	Fotakis, C	en
dc.date.accessioned	2014-03-01T02:42:48Z
dc.date.available	2014-03-01T02:42:48Z
dc.date.issued	2004	en
dc.identifier.issn	0947-8396	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31082
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-4344654749&partnerID=40&md5=b6bef8d03b6bc6979a7fdcfa19629d5a	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Atomic force microscopy	en
dc.subject.other	Capacitors	en
dc.subject.other	Lanthanum compounds	en
dc.subject.other	Polycrystalline materials	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Single crystals	en
dc.subject.other	Thin films	en
dc.subject.other	X ray diffraction	en
dc.subject.other	Crystal substrates	en
dc.subject.other	Femtosecond laser	en
dc.subject.other	Film deposition	en
dc.subject.other	Laser fluence	en
dc.subject.other	Pulsed laser deposition	en
dc.title	Growth of poly crystalline La0.5Sr0.5CoO3 films by femtosecond pulsed laser deposition	en
heal.type	conferenceItem	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	In this paper we present the growth of La0.5Sr0.5CoO3 (LSCO) films on MgO, quartz, and silicon substrates by pulsed laser deposition (PLD) using a Ti : sapphire laser (50 fs, 800 nm wavelength). The morphology and the structure of the films were studied by X-ray diffraction, atomic force microscopy, and scanning electron microscopy. The films were polycrystalline and exhibit a good adherence to the Si substrate. Different deposition parameters such as substrate temperature, oxygen pressure, and laser fluence were varied to achieve good surface quality and low resistivity crystalline films. We also defined the optimum conditions in which the deposited film surface is particulate free. The best films (droplets free) were grown at 625 degreesC, in an ambient oxygen pressure of 6 mbar, with an incident laser fluence of 0.19 J/cm(2). This is a mandatory step in the complex work of fabricating La0.5Sr0.5CoO3/BaTiO3/La0.5Sr0.5CoO3 heterostructures for the development of thin film capacitors for non-volatile ferroelectric access memory devices.	en
heal.publisher	SPRINGER	en
heal.journalName	Applied Physics A: Materials Science and Processing	en
dc.identifier.isi	ISI:000222766100047	en
dc.identifier.volume	79	en
dc.identifier.issue	4-6	en
dc.identifier.spage	911	en
dc.identifier.epage	914	en