Inductor over MOSFET: Operation and theoretical study of a CMOS RF three-dimensional structure

Papananos, Y; Nastos, N

dc.contributor.author	Papananos, Y	en
dc.contributor.author	Nastos, N	en
dc.date.accessioned	2014-03-01T02:42:49Z
dc.date.available	2014-03-01T02:42:49Z
dc.date.issued	2004	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31092
dc.subject	Cost Effectiveness	en
dc.subject	Three Dimensional	en
dc.subject	Three-dimensional Structure	en
dc.subject.other	Cost effectiveness	en
dc.subject.other	Electromagnets	en
dc.subject.other	Harmonic analysis	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Semiconductor devices	en
dc.subject.other	Simulators	en
dc.subject.other	Transistors	en
dc.subject.other	Circuit simulators	en
dc.subject.other	Inductor	en
dc.subject.other	Integration technology	en
dc.subject.other	Transistor channel	en
dc.subject.other	CMOS integrated circuits	en
dc.title	Inductor over MOSFET: Operation and theoretical study of a CMOS RF three-dimensional structure	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICMEL.2004.1314879	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICMEL.2004.1314879	en
heal.publicationDate	2004	en
heal.abstract	In this paper we examine the operation of a structure that consists of an integrated inductor placed over a MOSFET within the same silicon die. This setup forms a single-chip, three-dimensional analog RF topology and was firstly introduced in [1] and [2]. The structure takes advantage of an idle metal layer above active circuits and uses it for the implementation of an inductor. As a consequence, the total area of the system's analog part shrinks, the integrated inductor usage becomes more cost effective but the interference between inductor and transistor increases.	en
heal.journalName	Proceedings of the International Conference on Microelectronics	en
dc.identifier.doi	10.1109/ICMEL.2004.1314879	en
dc.identifier.volume	24 II	en
dc.identifier.spage	525	en
dc.identifier.epage	529	en