Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells

Kolliopoulou, S; Dimitrakis, P; Normand, P; Zhang, H-L; Cant, N; Evans, SD; Paul, S; Pearson, C; Molloy, A; Petty, MC; Tsoukalas, D

dc.contributor.author	Kolliopoulou, S	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Zhang, H-L	en
dc.contributor.author	Cant, N	en
dc.contributor.author	Evans, SD	en
dc.contributor.author	Paul, S	en
dc.contributor.author	Pearson, C	en
dc.contributor.author	Molloy, A	en
dc.contributor.author	Petty, MC	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T02:42:49Z
dc.date.available	2014-03-01T02:42:49Z
dc.date.issued	2004	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31096
dc.subject	Hybrid silicon-organic memory	en
dc.subject	Nanocrystal memory	en
dc.subject	Nanoparticles	en
dc.subject	Non-volatile memory	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Field effect transistors	en
dc.subject.other	Gates (transistor)	en
dc.subject.other	Langmuir Blodgett films	en
dc.subject.other	MISFET devices	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Nonvolatile storage	en
dc.subject.other	PROM	en
dc.subject.other	Self assembly	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Gate electrode	en
dc.subject.other	Gate stack dielectrics	en
dc.subject.other	Nanocrystal memory	en
dc.subject.other	Organic insulators	en
dc.subject.other	Semiconducting organic compounds	en
dc.title	Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2004.03.042	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2004.03.042	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	We have fabricated a hybrid non-volatile gold nanoparticle floating-gate memory metal insulator semiconductor field effect transistor (MISFET) device combining silicon technology and organic thin film deposition. The nanoparticles are deposited by chemical processes at room temperature over a 5 nm thermal silicon dioxide layer. A multi-layer organic insulator (cadmium arachidate) deposited by the Langmuir-Blodgett technique at room temperature covers the nanoparticle layer and separates it from an A1 gate electrode. Charge injection/rejection into the nanoparticles takes place by applying different voltage pulses (less than +/-6 V) to the gate electrode, resulting in significant threshold-voltage shift. Charge retention measurements reveal that the device has non-volatile behavior. (C) 2004 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2004.03.042	en
dc.identifier.isi	ISI:000222145400129	en
dc.identifier.volume	73-74	en
dc.identifier.spage	725	en
dc.identifier.epage	729	en