Laser microstructuring of Si surfaces for low-threshold field-electron emission

Zorba, V; Alexandrou, I; Zergioti, I; Manousaki, A; Ducati, C; Neumeister, A; Fotakis, C; Amaratunga, GAJ

dc.contributor.author	Zorba, V	en
dc.contributor.author	Alexandrou, I	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Manousaki, A	en
dc.contributor.author	Ducati, C	en
dc.contributor.author	Neumeister, A	en
dc.contributor.author	Fotakis, C	en
dc.contributor.author	Amaratunga, GAJ	en
dc.date.accessioned	2014-03-01T02:42:51Z
dc.date.available	2014-03-01T02:42:51Z
dc.date.issued	2004	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31105
dc.subject	Field emission	en
dc.subject	Laser materials processing	en
dc.subject	Microstructures	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Aspect ratio	en
dc.subject.other	Carbon nanotubes	en
dc.subject.other	Decoration	en
dc.subject.other	Electric potential	en
dc.subject.other	Electron emission	en
dc.subject.other	Laser beam effects	en
dc.subject.other	Laser pulses	en
dc.subject.other	Microstructure	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Single crystals	en
dc.subject.other	Sulfur compounds	en
dc.subject.other	X ray diffraction analysis	en
dc.subject.other	Field emissions	en
dc.subject.other	Laser materials processing	en
dc.subject.other	Microtip arrays	en
dc.subject.other	Silicon wafers	en
dc.title	Laser microstructuring of Si surfaces for low-threshold field-electron emission	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.tsf.2003.11.144	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2003.11.144	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2003.11.144	en
dc.identifier.isi	ISI:000220510900093	en
dc.identifier.volume	453-454	en
dc.identifier.spage	492	en
dc.identifier.epage	495	en