Low temperature wafer bonding for thin silicon film transfer

Goustouridis, D; Minoglou, K; Kolliopoulou, S; Chatzandroulis, S; Morfouli, P; Normand, P; Tsoukalas, D

dc.contributor.author	Goustouridis, D	en
dc.contributor.author	Minoglou, K	en
dc.contributor.author	Kolliopoulou, S	en
dc.contributor.author	Chatzandroulis, S	en
dc.contributor.author	Morfouli, P	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T02:42:52Z
dc.date.available	2014-03-01T02:42:52Z
dc.date.issued	2004	en
dc.identifier.issn	0924-4247	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31108
dc.subject	Bond strength	en
dc.subject	Low temperature bonding	en
dc.subject	Plasma activation	en
dc.subject	Silicon wafer bonding	en
dc.subject	Silicon-on-insulator (SOI)	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.other	Bond strength (chemical)	en
dc.subject.other	Chemical activation	en
dc.subject.other	Chemical bonds	en
dc.subject.other	Electronics packaging	en
dc.subject.other	Low temperature effects	en
dc.subject.other	Networks (circuits)	en
dc.subject.other	Silicon on insulator technology	en
dc.subject.other	Silicon wafers	en
dc.subject.other	Low temperature bonding	en
dc.subject.other	Plasma activation	en
dc.subject.other	Thin films	en
dc.title	Low temperature wafer bonding for thin silicon film transfer	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.sna.2003.09.011	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sna.2003.09.011	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	In this work, we investigate the low temperature (<200 degreesC) wafer bonding using wet chemical surface activation and we demonstrate high bonding strength sufficient to achieve the transfer of a thin silicon film of thickness less than 400 nm on top of another silicon wafer using spin-on-glass (SOG) film as an intermediate layer. The process developed is the first critical step that can enable three-dimensional (3D) integration and wafer level packaging of MEMS with electronic circuits. (C) 2003 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Sensors and Actuators, A: Physical	en
dc.identifier.doi	10.1016/j.sna.2003.09.011	en
dc.identifier.isi	ISI:000188700700063	en
dc.identifier.volume	110	en
dc.identifier.issue	1-3	en
dc.identifier.spage	401	en
dc.identifier.epage	406	en