dc.contributor.author |
Fotis, GP |
en |
dc.contributor.author |
Gonos, IF |
en |
dc.contributor.author |
Iracleous, DP |
en |
dc.contributor.author |
Stathopulos, IA |
en |
dc.date.accessioned |
2014-03-01T02:42:52Z |
|
dc.date.available |
2014-03-01T02:42:52Z |
|
dc.date.issued |
2004 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/31112 |
|
dc.subject |
Computer simulation |
en |
dc.subject |
Differential Equations |
en |
dc.subject |
Electrostatic Discharge (ESD) |
en |
dc.subject |
EN 61000-2 |
en |
dc.subject |
ESD generator |
en |
dc.subject |
Human Body model (HBM) |
en |
dc.subject.other |
Differential equations |
en |
dc.subject.other |
Electrostatics |
en |
dc.subject.other |
Networks (circuits) |
en |
dc.subject.other |
Numerical analysis |
en |
dc.subject.other |
Problem solving |
en |
dc.subject.other |
Semiconductor materials |
en |
dc.subject.other |
Electrostatic discharges |
en |
dc.subject.other |
EN 61000-2 |
en |
dc.subject.other |
ESD generators |
en |
dc.subject.other |
Human body models |
en |
dc.subject.other |
Electric discharges |
en |
dc.title |
Mathematical analysis and simulation for the Electrostatic Discharge (ESD) according to the EN 61000-4-2 |
en |
heal.type |
conferenceItem |
en |
heal.identifier.primary |
10.1109/UPEC.2004.192246 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1109/UPEC.2004.192246 |
en |
heal.publicationDate |
2004 |
en |
heal.abstract |
This paper is a study for the better understanding of the Electrostatic Discharge (ESD). Electrostatic discharge can change the electrical characteristics of a semiconductor device, degrading or destroying it. Both a mathematical analysis and a simulation process of the ESD generator's circuit of the European Standard 61000-4-2 are presented. In the mathematical aspect of the problem the differential equations for different types of EUT (Equipment Under Test) are solved. In the second part of this paper a computer simulation of these two types of circuits is shown, using both PSPICE and Matlab programs. A comparison between theoretical results of the mathematical analysis and the two simulation processes is obtained. Finally, conclusions for the ESD phenomenon are presented. |
en |
heal.journalName |
39th International Universities Power Engineering Conference, UPEC 2004 - Conference Proceedings |
en |
dc.identifier.doi |
10.1109/UPEC.2004.192246 |
en |
dc.identifier.volume |
1 |
en |
dc.identifier.spage |
228 |
en |
dc.identifier.epage |
232 |
en |