Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

Normand, P; Kapetanakis, E; Dimitrakis, P; Skarlatos, D; Beltsios, K; Tsoukalas, D; Bonafos, C; Ben Assayag, G; Cherkashin, N; Claverie, A; Van Den Berg, JA; Soncini, V; Agarwal, A; Ameen, M; Perego, M; Fanciulli, M

dc.contributor.author	Normand, P	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Bonafos, C	en
dc.contributor.author	Ben Assayag, G	en
dc.contributor.author	Cherkashin, N	en
dc.contributor.author	Claverie, A	en
dc.contributor.author	Van Den Berg, JA	en
dc.contributor.author	Soncini, V	en
dc.contributor.author	Agarwal, A	en
dc.contributor.author	Ameen, M	en
dc.contributor.author	Perego, M	en
dc.contributor.author	Fanciulli, M	en
dc.date.accessioned	2014-03-01T02:42:53Z
dc.date.available	2014-03-01T02:42:53Z
dc.date.issued	2004	en
dc.identifier.issn	0168-583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31123
dc.subject	Ion beam synthesis	en
dc.subject	Nanocrystals	en
dc.subject	Non-volatile memory	en
dc.subject	Silicon implantation	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.classification	Physics, Atomic, Molecular & Chemical	en
dc.subject.classification	Physics, Nuclear	en
dc.subject.other	Ion implantation	en
dc.subject.other	MOS devices	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Nonvolatile storage	en
dc.subject.other	Polysilicon	en
dc.subject.other	PROM	en
dc.subject.other	Random access storage	en
dc.subject.other	Silica	en
dc.subject.other	Synthesis (chemical)	en
dc.subject.other	Thin films	en
dc.subject.other	Ion beam synthesis (IBS)	en
dc.subject.other	Nanocrystals	en
dc.subject.other	Non-volatile memory	en
dc.subject.other	Silicon implantation	en
dc.subject.other	Ion beams	en
dc.title	Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.nimb.2003.11.039	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.nimb.2003.11.039	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications. (C) 2003 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.doi	10.1016/j.nimb.2003.11.039	en
dc.identifier.isi	ISI:000189222100038	en
dc.identifier.volume	216	en
dc.identifier.issue	1-4	en
dc.identifier.spage	228	en
dc.identifier.epage	238	en