Optical characterization of epitaxial CuxGaySe 2-layers by photoreflectance spectroscopy

Xue, C; Papadimitriou, D; Esser, N

dc.contributor.author	Xue, C	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Esser, N	en
dc.date.accessioned	2014-03-01T02:42:54Z
dc.date.available	2014-03-01T02:42:54Z
dc.date.issued	2004	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31135
dc.subject	MOCVD-CuGaSe2	en
dc.subject	Photoreflectance	en
dc.subject	Strain characterization	en
dc.subject	Valence band structure	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Crystallization	en
dc.subject.other	Energy gap	en
dc.subject.other	Epitaxial growth	en
dc.subject.other	Light scattering	en
dc.subject.other	Metallorganic chemical vapor deposition	en
dc.subject.other	Phonons	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Spectroscopic analysis	en
dc.subject.other	Stoichiometry	en
dc.subject.other	Photoreflectance spectroscopy	en
dc.subject.other	Strain characterization	en
dc.subject.other	Valence band structures	en
dc.subject.other	Copper compounds	en
dc.title	Optical characterization of epitaxial CuxGaySe 2-layers by photoreflectance spectroscopy	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.tsf.2003.10.116	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2003.10.116	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	The optical properties of epitaxial CuchiGaySe2 layers were studied in dependence of composition and temperature by photoreflectance (PR) spectroscopy and were compared to the results of photolummescence (PL) studies. The three valence-split bands, E-a, E-b and E-c, were intensively present in the PR-spectra of stoichiometric and Cu-rich layers, and weakly present in the spectra of Ga-rich layers. From the temperature-dependent PR-spectra, the phonon excitation energy for carrier scattering on phonons was calculated to (29+/-2) meV in agreement with the PL-results. From the composition-dependent PR-spectra strain effects were quantified: the contribution of the strain induced by a microcrystalline CuxSe-phase on the surface of Cu-rich layers in the overall strain of the layer was estimated to 13% for [Cu]/[Ga] = 1.80. (C) 2003 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2003.10.116	en
dc.identifier.isi	ISI:000220510500041	en
dc.identifier.volume	451-452	en
dc.identifier.spage	189	en
dc.identifier.epage	192	en