S-band high power solid-state amplifier design and development

Stratakos, Y; Betzios, P

dc.contributor.author	Stratakos, Y	en
dc.contributor.author	Betzios, P	en
dc.date.accessioned	2014-03-01T02:42:57Z
dc.date.available	2014-03-01T02:42:57Z
dc.date.issued	2004	en
dc.identifier.issn	0192-6225	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31151
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-3242700338&partnerID=40&md5=aaf4f3f86d2ee69501287d131fbcb426	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Telecommunications	en
dc.subject.other	Automatic gain control	en
dc.subject.other	Microwave power	en
dc.subject.other	Radio frequency	en
dc.subject.other	Remote amplifiers	en
dc.subject.other	Bandwidth	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Electron beams	en
dc.subject.other	Frequencies	en
dc.subject.other	Magnetrons	en
dc.subject.other	MESFET devices	en
dc.subject.other	Microstrip devices	en
dc.subject.other	Monolithic microwave integrated circuits	en
dc.subject.other	Particle accelerators	en
dc.subject.other	Power amplifiers	en
dc.subject.other	Product design	en
dc.subject.other	Semiconducting gallium arsenide	en
dc.subject.other	Solid state devices	en
dc.title	S-band high power solid-state amplifier design and development	en
heal.type	conferenceItem	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	The design and development of a 230 W power amplifier operating at S-band (2,35 to 2.45 GHz) is described. The motivation behind this development is the need for a microwave driver amplifier to be used in the linear accelerator facility at the Institute of Accelerating Systems and Applications at the University of Athens. It will replace the magnetron currently being used at low microwave power. The need for extremely stable microwave power for the electron beam pre-acceleration and chopping cavities makes it imperative to use a solid-state high power GaAs amplifier. The design technology uses microstrips, fabricated on RO4003 substrates, and special care has been taken to protect the amplifier from over temperature and overload. The amplifier is composed of three stages. The first is a MMIC and the other two use GaAs MESFETs. The amplifier also has forward and reflected signal indicators that can be used for remote amplifier control to shut it down if the VSWR is too high, for example, or to check the RF output level and provide automatic gain control. The amplifier was designed using a CAD program, which gave the flexibility to use robust optimizer tools for the complete design of the RF chain. Finally, test results are presented that show excellent agreement with the theoretical predictions.	en
heal.publisher	HORIZON HOUSE PUBLICATIONS INC	en
heal.journalName	Microwave Journal	en
dc.identifier.isi	ISI:000221441400002	en
dc.identifier.volume	47	en
dc.identifier.issue	5	en
dc.identifier.spage	178	en
dc.identifier.epage	193	en