Sensors and instrumentation for the magnetic field measurement under high neutron fluences

Hristoforou, E; Bolshakova, I; Hoiyaka, R; Duran, I; Stockel, J; Viererbl, L; Vayakis, G

dc.contributor.author	Hristoforou, E	en
dc.contributor.author	Bolshakova, I	en
dc.contributor.author	Hoiyaka, R	en
dc.contributor.author	Duran, I	en
dc.contributor.author	Stockel, J	en
dc.contributor.author	Viererbl, L	en
dc.contributor.author	Vayakis, G	en
dc.date.accessioned	2014-03-01T02:42:58Z
dc.date.available	2014-03-01T02:42:58Z
dc.date.issued	2004	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31157
dc.subject	High Energy	en
dc.subject	Magnetic Field	en
dc.subject	Thin Film	en
dc.subject.other	High energy physics	en
dc.subject.other	Magnetic field effects	en
dc.subject.other	Neutrons	en
dc.subject.other	Radiation effects	en
dc.subject.other	High-energy neutrons	en
dc.subject.other	Optimal parameters	en
dc.subject.other	Semiconductor sensors	en
dc.subject.other	Sensors	en
dc.title	Sensors and instrumentation for the magnetic field measurement under high neutron fluences	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICSENS.2004.1426361	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICSENS.2004.1426361	en
heal.identifier.secondary	T4P-P.4	en
heal.publicationDate	2004	en
heal.abstract	In this paper we present the results of a study of Hall-type magnetic field semiconductor sensors, based on monocrystalline whiskers and InSb thin films under harsh radiation conditions created by high-energy neutrons irradiation up to the Jluence of F=3,1·1016n·cm-2 in the reactorIBR-2 and up to the fluence of F= 1·1018n·cm-2 in reactor LVR-15. Optimal parameters of sensors ' semiconductor materials, ensuring maximum stability under these radiation conditions, were determined. © 2004 IEEE.	en
heal.journalName	Proceedings of IEEE Sensors	en
dc.identifier.doi	10.1109/ICSENS.2004.1426361	en
dc.identifier.volume	3	en
dc.identifier.spage	1075	en
dc.identifier.epage	1077	en