The influence of thermal treatment on the stress characteristics of suspended porous silicon membranes on silicon

Papadimitriou, D; Tsamis, C; Nassiopoulou, AG

dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Nassiopoulou, AG	en
dc.date.accessioned	2014-03-01T02:42:59Z
dc.date.available	2014-03-01T02:42:59Z
dc.date.issued	2004	en
dc.identifier.issn	0925-4005	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31172
dc.subject	Micro-hotplates	en
dc.subject	Porous silicon	en
dc.subject	Stress	en
dc.subject	Suspended membranes	en
dc.subject.classification	Chemistry, Analytical	en
dc.subject.classification	Electrochemistry	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.other	Annealing	en
dc.subject.other	Anodic oxidation	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Etching	en
dc.subject.other	Heat treatment	en
dc.subject.other	Ion implantation	en
dc.subject.other	Membranes	en
dc.subject.other	Ohmic contacts	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Stress analysis	en
dc.subject.other	Device fabrication	en
dc.subject.other	Isotropic etching	en
dc.subject.other	Micro-hotplates	en
dc.subject.other	Suspended membranes	en
dc.subject.other	Porous silicon	en
dc.title	The influence of thermal treatment on the stress characteristics of suspended porous silicon membranes on silicon	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.snb.2004.04.065	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.snb.2004.04.065	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	In this work, the mechanical properties of suspended porous silicon (PS) membranes on bulk silicon are investigated. Micro-Raman spectroscopy is used to characterize stresses in supported PS membranes, in the form of micro-hotplates that are fabricated by a recently developed technique, based on the isotropic etching of silicon under a PS layer, in a high-density plasma reactor. Important information is obtained for the stress evolution of PS as a function of porosity and the optimum annealing conditions in device fabrication. (C) 2004 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Sensors and Actuators, B: Chemical	en
dc.identifier.doi	10.1016/j.snb.2004.04.065	en
dc.identifier.isi	ISI:000224064100054	en
dc.identifier.volume	103	en
dc.identifier.issue	1-2	en
dc.identifier.spage	356	en
dc.identifier.epage	361	en