Tunneling and negative resistance effects for composite materials containing polyoxometalate molecules

Chaidogiannos, G; Velessiotis, D; Argitis, P; Koutsolelos, P; Diakoumakos, CD; Tsamakis, D; Glezos, N

dc.contributor.author	Chaidogiannos, G	en
dc.contributor.author	Velessiotis, D	en
dc.contributor.author	Argitis, P	en
dc.contributor.author	Koutsolelos, P	en
dc.contributor.author	Diakoumakos, CD	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Glezos, N	en
dc.date.accessioned	2014-03-01T02:43:00Z
dc.date.available	2014-03-01T02:43:00Z
dc.date.issued	2004	en
dc.identifier.issn	01679317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31181
dc.subject	Molecular electronics	en
dc.subject	Nanodevice	en
dc.subject	Negative resistance	en
dc.subject	Polyoxometalate	en
dc.subject	Quantum transport	en
dc.subject.other	Electric breakdown	en
dc.subject.other	Electron tunneling	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Negative resistance	en
dc.subject.other	Organic polymers	en
dc.subject.other	Permittivity	en
dc.subject.other	Photolithography	en
dc.subject.other	Tungsten	en
dc.subject.other	X ray lithography	en
dc.subject.other	Molecular electronics	en
dc.subject.other	Nanodevice	en
dc.subject.other	Polyoxometalates (POMs)	en
dc.subject.other	Quantum transport	en
dc.subject.other	Composite materials	en
dc.title	Tunneling and negative resistance effects for composite materials containing polyoxometalate molecules	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2004.03.046	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2004.03.046	en
heal.publicationDate	2004	en
heal.abstract	In this paper, molecular compounds that come from the class of tungsten or molybdenum polyoxometalates (POMs) are examined as components of polymeric materials with potential use in molecular devices. The idea is to combine POMs with resist systems in order to obtain materials suitable for fabrication of molecular electronic devices. Several resist components have been tested and the transport properties have been investigated. Planar and vertical devices have been prepared in order to investigate the transport properties of these materials. Measurements with planar Al or Au electrodes have shown that these materials present conductivity peaks at room temperature conditions. In some cases, the photocurrent has proved to be significant. The use of vertical capacitor structures allowed the investigation of the dependence of the dielectric constant of the composite material upon POM concentration as well as dielectric breakdown. In the case of thinner films (≤10 nm) negative resistance effects at room temperature conditions are observed. © 2004 Elsevier B.V. All rights reserved.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2004.03.046	en
dc.identifier.volume	73-74	en
dc.identifier.spage	746	en
dc.identifier.epage	751	en