A fully 2-dimensional poisson-schrödinger modeling of the HEMT: Effects of short gate lengths

Krokidis, G; Xanthakis, JP; Uzunoglu, N

dc.contributor.author	Krokidis, G	en
dc.contributor.author	Xanthakis, JP	en
dc.contributor.author	Uzunoglu, N	en
dc.date.accessioned	2014-03-01T02:43:03Z
dc.date.available	2014-03-01T02:43:03Z
dc.date.issued	2005	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31200
dc.subject	2 dimensional	en
dc.title	A fully 2-dimensional poisson-schrödinger modeling of the HEMT: Effects of short gate lengths	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2005.1595964	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2005.1595964	en
heal.identifier.secondary	1595964	en
heal.publicationDate	2005	en
heal.abstract	[No abstract available]	en
heal.journalName	2005 International Semiconductor Device Research Symposium	en
dc.identifier.doi	10.1109/ISDRS.2005.1595964	en
dc.identifier.volume	2005	en
dc.identifier.spage	36	en
dc.identifier.epage	37	en