A Si/SiGe MOSFET utilizing low-temperature wafer bonding

Koliopoulou, S; Dimitrakis, P; Goustouridis, D; Chatzandroulis, S; Normand, P; Tsoukalas, D; Radamson, H

dc.contributor.author	Koliopoulou, S	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Goustouridis, D	en
dc.contributor.author	Chatzandroulis, S	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Radamson, H	en
dc.date.accessioned	2014-03-01T02:43:05Z
dc.date.available	2014-03-01T02:43:05Z
dc.date.issued	2005	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31219
dc.subject	GIDL effect	en
dc.subject	SiGe MOSFET	en
dc.subject	Wafer bonding	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Epitaxial growth	en
dc.subject.other	Integrated circuits	en
dc.subject.other	Photolithography	en
dc.subject.other	Semiconducting silicon compounds	en
dc.subject.other	Silicon wafers	en
dc.subject.other	GIDL effect	en
dc.subject.other	Silicon overlayers	en
dc.subject.other	Spin-on-glass (SOG)	en
dc.subject.other	Wafer bonding	en
dc.subject.other	MOSFET devices	en
dc.title	A Si/SiGe MOSFET utilizing low-temperature wafer bonding	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2004.12.034	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2004.12.034	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	A process scheme for the fabrication of a low temperature SiGe V-groove MOSFET is demonstrated. The transfer and output characteristics show promising results for the device performance. The source/drain resistance and the quality of the gate insulator/SiGe channel must be optimized for device operation improvement. (c) 2004 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2004.12.034	en
dc.identifier.isi	ISI:000228589700042	en
dc.identifier.volume	78-79	en
dc.identifier.issue	1-4	en
dc.identifier.spage	244	en
dc.identifier.epage	247	en