Bandwidth and noise of submillimeter wave cuprate bicrystal Josephson junction detectors

Ovsyannikov, GA; Borisenko, IV; Constantinian, KY; Kislinski, YV; Hakhoumian, AA; Pogosyan, NG; Zakaryan, T; Pedersen, NF; Mygind, J; Uzunoglu, N; Karagianni, E

dc.contributor.author	Ovsyannikov, GA	en
dc.contributor.author	Borisenko, IV	en
dc.contributor.author	Constantinian, KY	en
dc.contributor.author	Kislinski, YV	en
dc.contributor.author	Hakhoumian, AA	en
dc.contributor.author	Pogosyan, NG	en
dc.contributor.author	Zakaryan, T	en
dc.contributor.author	Pedersen, NF	en
dc.contributor.author	Mygind, J	en
dc.contributor.author	Uzunoglu, N	en
dc.contributor.author	Karagianni, E	en
dc.date.accessioned	2014-03-01T02:43:09Z
dc.date.available	2014-03-01T02:43:09Z
dc.date.issued	2005	en
dc.identifier.issn	10518223	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31257
dc.subject	High-temperature cuprate superconductors	en
dc.subject	Josephson junction	en
dc.subject	Submillimeter wave devices	en
dc.subject.other	Bandwidth	en
dc.subject.other	Broadcasting antennas	en
dc.subject.other	Crystallography	en
dc.subject.other	Diode amplifiers	en
dc.subject.other	Frequency domain analysis	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Oxide superconductors	en
dc.subject.other	Sensors	en
dc.subject.other	Spectrum analyzers	en
dc.subject.other	Submillimeter waves	en
dc.subject.other	Backward wave oscillators (BWO)	en
dc.subject.other	Double-slot antenna	en
dc.subject.other	High-temperature cuprate superconductors	en
dc.subject.other	Normal state resistance	en
dc.subject.other	Josephson junction devices	en
dc.title	Bandwidth and noise of submillimeter wave cuprate bicrystal Josephson junction detectors	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/TASC.2005.849902	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TASC.2005.849902	en
heal.publicationDate	2005	en
heal.abstract	Detectors made from superconducting cuprate YBa2Cu3Ox bicrystal Josephson junctions (BJJs) on sapphire and NdGaO3 substrates have been fabricated and characterized in the frequency band 200-900 GHz. Junctions on sapphire substrates had a normal state resistance RN ≈ 15 - 60 Ω, and IC-RN product up to 2.5 mV at T = 4.2 K. Junctions on NdGaO3 substrates had lower RN = 1 - 5 Ω and ICRN = 0.4-0.9 mV at T = 77 K. Three types of detecting devices have been investigated in both the broadband and the frequency-selective detection modes. One type was patterned with log-periodic antenna, and two others with Pt-metal double-slot antenna designed for a central frequency f = 300 GHz and f = 400 GHz, respectively. Measurements at f = 320 GHz of the reception bandwidth Δf for a device with double-slot antenna gave a quality factor Q = f/Δf ≈ 10. A low-noise cooled 1-2 GHz bandwidth amplifier enables a better sensitivity in the self-pumping frequency mixing mode, avoiding the 1/f noise. The dependence of the spectral density of noise on voltage was compared to the data for the Josephson emission linewidth obtained by the selective detector response method. Also discussed are measurements at 500 GHz of the NEP values carried out at different experimental conditions. © 2005 IEEE.	en
heal.journalName	IEEE Transactions on Applied Superconductivity	en
dc.identifier.doi	10.1109/TASC.2005.849902	en
dc.identifier.volume	15	en
dc.identifier.issue	2 PART I	en
dc.identifier.spage	533	en
dc.identifier.epage	536	en