Deposition and electrical characterisation of a MOS memory structure containing Au nanoparticles in a high-k dielectric layer

Sargentis, Ch; Giannakopoulos, K; Travlos, A; Tsamakis, D; Krokidis, G

dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Krokidis, G	en
dc.date.accessioned	2014-03-01T02:43:12Z
dc.date.available	2014-03-01T02:43:12Z
dc.date.issued	2005	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31291
dc.subject	Memory Effect	en
dc.subject	Mos Device	en
dc.subject	Work Function	en
dc.subject	Capacitance Voltage	en
dc.title	Deposition and electrical characterisation of a MOS memory structure containing Au nanoparticles in a high-k dielectric layer	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2005.1596126	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2005.1596126	en
heal.identifier.secondary	1596126	en
heal.publicationDate	2005	en
heal.abstract	In this work, we use the MBE method in order to fabricate MOS memory devices with gold (Au) nanoparticles embedded on a SiO2/HfO2 interface. We have chosen to work with Au nanoparticles due to the fact that Au has a large work function. The device shows a clear hysteresis behavior on C-V (capacitance-voltage) and G-V (conductance-voltage) measurements. These measurements demonstrate	en
heal.journalName	2005 International Semiconductor Device Research Symposium	en
dc.identifier.doi	10.1109/ISDRS.2005.1596126	en
dc.identifier.volume	2005	en
dc.identifier.spage	342	en
dc.identifier.epage	343	en