Imprint lithography on poly(2-hydroxyethyl methacrylate), (PHEMA), and epoxydised novolac, (EPN) polymers

Zacharatos, FA; Olziersky, A; Raptis, I; Hristoforou, E

dc.contributor.author	Zacharatos, FA	en
dc.contributor.author	Olziersky, A	en
dc.contributor.author	Raptis, I	en
dc.contributor.author	Hristoforou, E	en
dc.date.accessioned	2014-03-01T02:43:22Z
dc.date.available	2014-03-01T02:43:22Z
dc.date.issued	2005	en
dc.identifier.issn	1454-4164	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31368
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-17744371133&partnerID=40&md5=77c68dc48ac409878297b740bed52aad	en
dc.subject	Epoxydised novolac	en
dc.subject	Lithography	en
dc.subject	Nanoimprint	en
dc.subject	Poly(2-hydroxyethyl methacrylate)	en
dc.subject	Resist	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Durability	en
dc.subject.other	Glass transition	en
dc.subject.other	Plastic films	en
dc.subject.other	Plastics molding	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Thermoplastics	en
dc.subject.other	Ultraviolet radiation	en
dc.subject.other	Viscosity	en
dc.subject.other	Epoxydized novolac	en
dc.subject.other	Mold intrusion	en
dc.subject.other	Nanoimprint lithography	en
dc.subject.other	Poly(2-hydroxyethyl methacrylate)	en
dc.subject.other	Photolithography	en
dc.title	Imprint lithography on poly(2-hydroxyethyl methacrylate), (PHEMA), and epoxydised novolac, (EPN) polymers	en
heal.type	conferenceItem	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	Nanoimprint lithography (NIL) is a very effective, non-conventional lithographic method, which takes advantage of the mechanical and thermal properties of polymeric materials and structures them with application of pressure and high temperature. An imprint process that presses a mold into a thin polymeric film of poly(2-hydroxyethyl methacrylate), PHEMA, and epoxydised novolac, (EPN), cast on a silicon substrate, has been developed and demonstrated. For the fulfillment of the experiments, a home-made apparatus was designed and implemented. The printed structures had a feature size of 1 mu m and their depth didn't exceed 50 nm in some cases.	en
heal.publisher	NATL INST OPTOELECTRONICS	en
heal.journalName	Journal of Optoelectronics and Advanced Materials	en
dc.identifier.isi	ISI:000228785700083	en
dc.identifier.volume	7	en
dc.identifier.issue	2	en
dc.identifier.spage	1121	en
dc.identifier.epage	1127	en