Injection of point defects during annealing of low energy As implanted silicon

Tsamis, C; Skarlatos, D; Valamontes, V; Tsoukalas, D; Benassayag, G; Claverie, A; Lerch, W

dc.contributor.author	Tsamis, C	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Valamontes, V	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Benassayag, G	en
dc.contributor.author	Claverie, A	en
dc.contributor.author	Lerch, W	en
dc.date.accessioned	2014-03-01T02:43:23Z
dc.date.available	2014-03-01T02:43:23Z
dc.date.issued	2005	en
dc.identifier.issn	0921-5107	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31374
dc.subject	Annealing	en
dc.subject	Injection	en
dc.subject	Point defects	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Annealing	en
dc.subject.other	Etching	en
dc.subject.other	Ion implantation	en
dc.subject.other	Point defects	en
dc.subject.other	Silicon	en
dc.subject.other	Supersaturation	en
dc.subject.other	Clustering	en
dc.subject.other	Diffusion profiles	en
dc.subject.other	Injection	en
dc.subject.other	Silicon surface	en
dc.subject.other	Arsenic	en
dc.title	Injection of point defects during annealing of low energy As implanted silicon	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mseb.2005.08.123	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mseb.2005.08.123	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low energy arsenic implantation. The diffusion of the implanted arsenic as well as of boron, existing in buried delta-layers below the silicon surface, is monitored while successive amounts of the arsenic profile are removed by low temperature wet silicon etching. From the analysis of the diffusion profiles of both dopants, consistent values for the interstitial supersaturation ratio can be obtained. Moreover, the experimental results indicate that the contribution of the implantation damage to the TED of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions. (c) 2005 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	en
dc.identifier.doi	10.1016/j.mseb.2005.08.123	en
dc.identifier.isi	ISI:000233895800050	en
dc.identifier.volume	124-125	en
dc.identifier.issue	SUPPL.	en
dc.identifier.spage	261	en
dc.identifier.epage	265	en