New field sensors based on combined Fluxgate - Hall Effect magneto-transport arrangement

Petridis, C; Hristoforou, E; Dimitropoulos, PD

dc.contributor.author	Petridis, C	en
dc.contributor.author	Hristoforou, E	en
dc.contributor.author	Dimitropoulos, PD	en
dc.date.accessioned	2014-03-01T02:43:26Z
dc.date.available	2014-03-01T02:43:26Z
dc.date.issued	2005	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31408
dc.subject	Hall Effect	en
dc.subject	Low Temperature	en
dc.subject	Magnetic Field Sensor	en
dc.subject.other	CMOS integrated circuits	en
dc.subject.other	Electric coils	en
dc.subject.other	Hall effect	en
dc.subject.other	Magnetic cores	en
dc.subject.other	Magnetic field effects	en
dc.subject.other	Magnetic field measurement	en
dc.subject.other	Magnetization	en
dc.subject.other	CMOS technologies	en
dc.subject.other	Core magnetization	en
dc.subject.other	Hall devices	en
dc.subject.other	Magnetic field sensors	en
dc.subject.other	Sensors	en
dc.title	New field sensors based on combined Fluxgate - Hall Effect magneto-transport arrangement	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICSENS.2005.1597637	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICSENS.2005.1597637	en
heal.identifier.secondary	1597637	en
heal.publicationDate	2005	en
heal.abstract	A novel 2D magnetic field sensor is presented that is based on a combined Fluxgate/Hall-Effect arrangement. The proposed device involves a thin, isotropic, circular magnetic core, the magnetization of which is driven to saturation, by means of a rotating excitation-field produced by four printed planar coils. That way, the core magnetization rotates, without Barkhausen jumps inducing two orthogonal harmonic flux-density signals that are sensed respectively by two pairs of Hall devices positioned at the edge of the core. The presented sensor incorporates discrete Hall devices and electronic circuitry, as well as a 200 mm diameter amorphous core, packaged on a PCB board. However, the system can easily be implemented on a single silicon-chip, by means of standard CMOS technologies. In this case, the amorphous core is attached onto the chip that contains the Hall devices, planar coils, and electronic circuitry, according to a state-of-art low-temperature post-process. © 2005 IEEE.	en
heal.journalName	Proceedings of IEEE Sensors	en
dc.identifier.doi	10.1109/ICSENS.2005.1597637	en
dc.identifier.volume	2005	en
dc.identifier.spage	61	en
dc.identifier.epage	64	en