On the radiation damage effects in semiconductors beyond the end of range of implanted protons at high energies and fluences

Kokkoris, M; Spyrou, A; Perdikakis, G; Vlastou, R; Papadopoulos, CT; Lagoyannis, A; Simoen, E; Kossionides, S

dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Spyrou, A	en
dc.contributor.author	Perdikakis, G	en
dc.contributor.author	Vlastou, R	en
dc.contributor.author	Papadopoulos, CT	en
dc.contributor.author	Lagoyannis, A	en
dc.contributor.author	Simoen, E	en
dc.contributor.author	Kossionides, S	en
dc.date.accessioned	2014-03-01T02:43:26Z
dc.date.available	2014-03-01T02:43:26Z
dc.date.issued	2005	en
dc.identifier.issn	0168-583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31416
dc.subject	Backscattering	en
dc.subject	Channeling	en
dc.subject	Coulomb explosion	en
dc.subject	Radiation damage	en
dc.subject	RBS/C	en
dc.subject	Semiconductors	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.classification	Physics, Atomic, Molecular & Chemical	en
dc.subject.classification	Physics, Nuclear	en
dc.subject.other	Backscattering	en
dc.subject.other	Crystal structure	en
dc.subject.other	Irradiation	en
dc.subject.other	Mathematical models	en
dc.subject.other	Perturbation techniques	en
dc.subject.other	Protons	en
dc.subject.other	Semiconductor materials	en
dc.subject.other	Channeling perturbations	en
dc.subject.other	Coulomb explosion model	en
dc.subject.other	Fluences	en
dc.subject.other	RBS/C	en
dc.subject.other	Radiation damage	en
dc.title	On the radiation damage effects in semiconductors beyond the end of range of implanted protons at high energies and fluences	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.nimb.2005.06.109	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.nimb.2005.06.109	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	In the present work the radiation damage effects induced by 5.88 MeV protons in Si and InP crystals, of similar to 400 and 325 mu m thickness, respectively, are examined and analyzed for high fluences ranging between 10(16) and 10(18) particles/cm(2). The irradiation occurs in the random mode by constantly rotating the targets in order to minimize the channeling perturbations, while the control of the induced damage is performed by utilizing the RBS/C technique on the inverse side of the crystals, implementing the proton beam at a reduced energy (E-p = 1.2 MeV). The experimental results reveal impressive extensions of the damage profiles well beyond the end of range of implanted protons. Conventional theoretical calculations, as well as standard SRIM predictions, seem to underestimate the induced effects. An attempt is made in order to explain the experimental spectra via the adoption of the Coulomb explosion model and the results are compared to other already existing in literature for different beam-target combinations. (c) 2005 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.doi	10.1016/j.nimb.2005.06.109	en
dc.identifier.isi	ISI:000233208400035	en
dc.identifier.volume	240	en
dc.identifier.issue	1-2	en
dc.identifier.spage	168	en
dc.identifier.epage	173	en