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Structural characterization and optoelectronic properties of boron thermally diffused SI (400)

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dc.contributor.author Frantzeskakis, E en
dc.contributor.author Tsakiridis, PE en
dc.contributor.author Hristoforou, E en
dc.date.accessioned 2014-03-01T02:43:33Z
dc.date.available 2014-03-01T02:43:33Z
dc.date.issued 2005 en
dc.identifier.issn 1454-4164 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/31473
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-22544459922&partnerID=40&md5=7928095aa42bde0704de54a17659eda2 en
dc.subject Boron en
dc.subject Optoelectronic properties en
dc.subject Silicon (400) en
dc.subject Thermal Diffusion en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Optics en
dc.subject.classification Physics, Applied en
dc.subject.other SILICON en
dc.subject.other JUNCTIONS en
dc.subject.other IMPLANTATION en
dc.subject.other SUBMICRON en
dc.subject.other SI(001) en
dc.title Structural characterization and optoelectronic properties of boron thermally diffused SI (400) en
heal.type conferenceItem en
heal.language English en
heal.publicationDate 2005 en
heal.abstract Thermal diffusion of boron into silicon single crystal at 1100 degrees C, followed by annealing, in inert atmosphere, has been investigated with respect to corresponding optoelectronic properties. A layer of boron powder, deposited on a silicon (400) wafer, was used as a dopant source for B. The cold resistance response of the films with respect to light of different wavelengths was used for the quantification of their optoelectronic properties. A correlation between the optoelectronic behavior and the structural characterization of the produced samples was also realized. en
heal.publisher NATL INST OPTOELECTRONICS en
heal.journalName Journal of Optoelectronics and Advanced Materials en
dc.identifier.isi ISI:000229987500055 en
dc.identifier.volume 7 en
dc.identifier.issue 3 en
dc.identifier.spage 1499 en
dc.identifier.epage 1509 en


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