Photoreflectance study of multilayer structures of nanocrystalline CdSe in insulator matrix

Manolis, G; Papadimitriou, D; Nesheva, D

dc.contributor.author	Manolis, G	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Nesheva, D	en
dc.date.accessioned	2014-03-01T02:44:09Z
dc.date.available	2014-03-01T02:44:09Z
dc.date.issued	2006	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31711
dc.subject	Band diagram	en
dc.subject	CdSe/GeS2	en
dc.subject	CdSe/SiOx	en
dc.subject	Nanocrystalline materials	en
dc.subject	Photoreflectance spectroscopy	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Cadmium compounds	en
dc.subject.other	Energy gap	en
dc.subject.other	Evaporation	en
dc.subject.other	Multilayers	en
dc.subject.other	Semiconductor quantum wells	en
dc.subject.other	Band diagram	en
dc.subject.other	CdSe/GeS2	en
dc.subject.other	CdSe/SiOx	en
dc.subject.other	Photoreflectance spectroscopy	en
dc.subject.other	Nanostructured materials	en
dc.title	Photoreflectance study of multilayer structures of nanocrystalline CdSe in insulator matrix	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.tsf.2005.08.287	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2005.08.287	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	Nanocrystalline multilayer structures of CdSe/SiOx and CdSe/GeS2, with layer thickness varying from 2.5 to 10 nm, were grown by a modified conventional vacuum thermal evaporation technique [R. Ionov and D. Nesheva, Thin Solid Films 213(2), 230 (1992).]. Low temperature photoreflectance (PR) measurements at 20 K reveal dependence of the energy band gap on the layer thickness. This dependence is for the Cdse/SiOx multilayer structures in good agreement with previously published theoretical predictions [D. Nesheva, C. Raptis, and Z. Levi, Phys. Rev. B 58(12), 7913 (1998).] of hole confinement in a potential well of U-h approximate to 1.3 eV in the Cdse sublayers. For the Cdse/GeS2 multilayers, it is the first direct experimental evidence of the low dimensionality of these structures. Based on the experimental results obtained, a schematic band diagram of these multilayers is suggested. Due to the low cost of the growth techniques, the nanocrystalline multiquantum wells studied may prove of high technological interest for optoelectronic applications. (c) 2005 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2005.08.287	en
dc.identifier.isi	ISI:000233983900061	en
dc.identifier.volume	495	en
dc.identifier.issue	1-2	en
dc.identifier.spage	338	en
dc.identifier.epage	342	en