Via hole formation in silicon carbide by laser micromachining

Zekentes, K; Zergioti, I; Klini, A; Constantinidis, G

dc.contributor.author	Zekentes, K	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Klini, A	en
dc.contributor.author	Constantinidis, G	en
dc.date.accessioned	2014-03-01T02:44:21Z
dc.date.available	2014-03-01T02:44:21Z
dc.date.issued	2006	en
dc.identifier.issn	02555476	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31772
dc.subject	Laser micromachining	en
dc.subject	Via-hole	en
dc.subject.other	Hole formation	en
dc.subject.other	Laser micromachining	en
dc.subject.other	Excimer lasers	en
dc.subject.other	Laser ablation	en
dc.subject.other	Laser pulses	en
dc.subject.other	Micromachining	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Silicon carbide	en
dc.title	Via hole formation in silicon carbide by laser micromachining	en
heal.type	conferenceItem	en
heal.identifier.primary	10.4028/www.scientific.net/MSF.527-529.1119	en
heal.identifier.secondary	http://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.1119	en
heal.publicationDate	2006	en
heal.abstract	A 248 nm (KrF) excimer laser with a repetition rate of 10 Hz, pulse duration of 30 ns and beam energy up to 450 mJ was employed to form vias in 4H-SiC substrates and Lely platelets. SEM micrographs have been used to evaluate etched material quality as well as etch rate. The area surrounding the via-holes is covered by nanoparticles, which are debris from the laser ablation and are removed by chemical cleaning and agitation. The etch-rate exhibits a perfect linear behaviour versus the number of laser pulses showing the possibility of an all-laser via-hole formation. A slight tapering along the via-holes, useful for the subsequent metallization process is also observed. Finally, a defective, 15 μm wide, zone is formed nearby the sidewalls.	en
heal.journalName	Materials Science Forum	en
dc.identifier.doi	10.4028/www.scientific.net/MSF.527-529.1119	en
dc.identifier.volume	527-529	en
dc.identifier.issue	PART 2	en
dc.identifier.spage	1119	en
dc.identifier.epage	1122	en