A comparative study of MOS memory structures that contain platinum or gold nanoparticles

Sargentis, Ch; Giannakopoulos, K; Travlos, A; Tsamakis, D

dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T02:44:22Z
dc.date.available	2014-03-01T02:44:22Z
dc.date.issued	2007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31784
dc.subject	Gold Nanoparticle	en
dc.subject	Room Temperature	en
dc.title	A comparative study of MOS memory structures that contain platinum or gold nanoparticles	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2007.4422319	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2007.4422319	en
heal.identifier.secondary	4422319	en
heal.publicationDate	2007	en
heal.abstract	In this work, electrical characteristics of two types MOS memory structures: one that contains platinum and one that contains gold nanoparticles, embedded between two dielectric layers, a thin "tunneling" SiO2 and a thicker HfO2 "control" layer has been compared. The nanoparticles are formed during simple electron-gun deposition of a very small quantity of platinum or gold, at room temperature, on	en
heal.journalName	2007 International Semiconductor Device Research Symposium, ISDRS	en
dc.identifier.doi	10.1109/ISDRS.2007.4422319	en