Determining MOSFET parameters in moderate inversion

Bucher, M; Bazigos, A; Grabinski, W

dc.contributor.author	Bucher, M	en
dc.contributor.author	Bazigos, A	en
dc.contributor.author	Grabinski, W	en
dc.date.accessioned	2014-03-01T02:44:35Z
dc.date.available	2014-03-01T02:44:35Z
dc.date.issued	2007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31881
dc.subject	Series Resistance	en
dc.subject	Technology Scaling	en
dc.subject	Threshold Voltage	en
dc.subject.other	Electron tubes	en
dc.subject.other	Health	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Networks (circuits)	en
dc.subject.other	Standards	en
dc.subject.other	Biasing currents	en
dc.subject.other	Constant Current (CC)	en
dc.subject.other	Deep-submicron CMOS technology	en
dc.subject.other	Electronic circuits	en
dc.subject.other	Model parameters	en
dc.subject.other	Moderate inversions	en
dc.subject.other	New methods	en
dc.subject.other	Series resistance (ESR)	en
dc.subject.other	standard CMOS technology	en
dc.subject.other	Statistical data	en
dc.subject.other	supply voltages	en
dc.subject.other	Transconductance-to-current ratio	en
dc.subject.other	volt age range	en
dc.subject.other	Parameter estimation	en
dc.title	Determining MOSFET parameters in moderate inversion	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/DDECS.2007.4295310	en
heal.identifier.secondary	http://dx.doi.org/10.1109/DDECS.2007.4295310	en
heal.identifier.secondary	4295310	en
heal.publicationDate	2007	en
heal.abstract	Deep submicron CMOS technology scaling leads to reduced strong inversion voltage range due to non-scalability of threshold voltage, while supply voltage is reduced. Moderate inversion operation therefore becomes increasingly important. In this paper, a new method of determining MOSFET parameters in moderate inversion is presented. Model parameters are determined using a constant current bias technique, where the biasing current is estimated from the transconductance-to-current ratio. This technique is largely insensitive to mobility effects and series resistance. Statistical data measured on 40 dies a 0.25um standard CMOS technology are used for the illustration of this method. © 2007 IEEE.	en
heal.journalName	Proceedings of the 2007 IEEE Workshop on Design and Diagnostics of Electronic Circuits and Systems, DDECS	en
dc.identifier.doi	10.1109/DDECS.2007.4295310	en
dc.identifier.spage	349	en
dc.identifier.epage	352	en