Proton radiation effects on nanocrystal non-volatile memories

Verrelli, E; Tsoukalas, D; Kokkoris, M; Vlastou, R; Dimitrakis, P; Normand, P

dc.contributor.author	Verrelli, E	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Vlastou, R	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Normand, P	en
dc.date.accessioned	2014-03-01T02:44:55Z
dc.date.available	2014-03-01T02:44:55Z
dc.date.issued	2007	en
dc.identifier.issn	0018-9499	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32027
dc.subject	Data retention	en
dc.subject	Nanocrystal memories	en
dc.subject	Nonvolatile memory (NVM)	en
dc.subject	Proton radiation effects	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.other	Irradiation	en
dc.subject.other	MOS capacitors	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Nanocrystals	en
dc.subject.other	Nonvolatile storage	en
dc.subject.other	Protons	en
dc.subject.other	Radiation effects	en
dc.subject.other	Silica	en
dc.subject.other	Charge retention	en
dc.subject.other	Data retention	en
dc.subject.other	Ion-beam-synthesis	en
dc.subject.other	Proton radiation effects	en
dc.subject.other	Data storage equipment	en
dc.title	Proton radiation effects on nanocrystal non-volatile memories	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/TNS.2007.902365	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TNS.2007.902365	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	We report on proton radiation effects on Si-nanocrystal (Si-NCs) MOS, capacitors and nMOS transistors aiming at non-volatile memory applications. Irradiation experiments were conducted on NC MOS capacitors using protons of 1.5 MeV and 6.5 MeV and on NC nMOS transistors using protons of 1.5 MeV. The range of doses investigated was similar to 1 to similar to 100 Mrad(SiO2). A 2-D layer of Si NCs with similar to 3 nm mean diameter and 1012 cm(-2) surface density was successfully achieved by low-energy (1 keV) ion-beam-synthesis in thin SiO2 layers. After irradiation, programmed capacitors are found to' undergo bit flip while programmed transistors are not. Charge retention measurements at room temperature for the write and erase states of irradiated and non-irradiated samples reveal that a significant memory window exists at an extrapolated time of ten years even after an irradiation dose as high as 120 Mrad (SiO2). The flat-band decay rate of the erase state in NC MOS capacitors does not depend on the irradiation-dose while the opposite occurs for the write state which is found to be directly dependent on D-it values after irradiation. These results clearly indicate that NC Non-Volatile Memories (NVM) are promising radiation tolerant devices.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE Transactions on Nuclear Science	en
dc.identifier.doi	10.1109/TNS.2007.902365	en
dc.identifier.isi	ISI:000248977700017	en
dc.identifier.volume	54	en
dc.identifier.issue	4	en
dc.identifier.spage	975	en
dc.identifier.epage	981	en