Structural changes in amorphous chalcogenide semiconductors under high pressure: A Raman study

Boulmetis, YC; Stavrou, E; Raptis, C

dc.contributor.author	Boulmetis, YC	en
dc.contributor.author	Stavrou, E	en
dc.contributor.author	Raptis, C	en
dc.date.accessioned	2014-03-01T02:44:58Z
dc.date.available	2014-03-01T02:44:58Z
dc.date.issued	2007	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32054
dc.subject	amorphous chalcogenide	en
dc.subject	High Pressure	en
dc.subject	Structural Change	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	ELASTIC PROPERTIES	en
dc.subject.other	GLASSES	en
dc.subject.other	TEMPERATURE	en
dc.subject.other	DEPENDENCE	en
dc.subject.other	GES2	en
dc.subject.other	SCATTERING	en
dc.title	Structural changes in amorphous chalcogenide semiconductors under high pressure: A Raman study	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1002/pssb.200672553	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssb.200672553	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	The Raman spectra of binary As-S and ternary Ge-As-S semiconducting chalcogenide glasses have been studied under variable hydrostatic pressure up to 7.0 GPa. Two As-S glasses were investigated, the first at the stoichiometric composition As2S3 (with critical mean coordination number value Z = 2.4) and the other S-rich, non-stoichiometric one belonging to the floppy network regime (AsS4, Z = 2.2), while the ternary Ge-As-S glass was on the rigid network side (Ge25As10S65, Z = 2.6). Reversible pressure-induced effects have been observed in the floppy AsS4 glass manifested by the amorphization of its crystalline sulphur domains. In contrast, the pressure-induced appearance of homopolar Ge-Ge bonds and the formation of ""ethanol-like"" S3Ge-GeS3 units in the rigid ternary Ge25As10S65 glass are irreversible, after pressure relief. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (B) Basic Research	en
dc.identifier.doi	10.1002/pssb.200672553	en
dc.identifier.isi	ISI:000243693600045	en
dc.identifier.volume	244	en
dc.identifier.issue	1	en
dc.identifier.spage	256	en
dc.identifier.epage	260	en