Deposition and electrical characterization of hafnium oxide films on silicon

Verrelli, E; Tsoukalas, D; Kouvatsos, D

dc.contributor.author	Verrelli, E	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Kouvatsos, D	en
dc.date.accessioned	2014-03-01T02:45:13Z
dc.date.available	2014-03-01T02:45:13Z
dc.date.issued	2008	en
dc.identifier.issn	18626351	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32212
dc.subject.other	Deposited films	en
dc.subject.other	Deposition Parameters	en
dc.subject.other	Electrical characterizations	en
dc.subject.other	Electrical properties	en
dc.subject.other	Hafnium oxide dielectrics	en
dc.subject.other	Hafnium oxide films	en
dc.subject.other	Hfo2 films	en
dc.subject.other	Mis capacitors	en
dc.subject.other	Quartz crystals	en
dc.subject.other	RF reactive sputtering	en
dc.subject.other	Si substrates	en
dc.subject.other	Silicon dioxides	en
dc.subject.other	Silicon Technologies	en
dc.subject.other	Administrative data processing	en
dc.subject.other	Alumina	en
dc.subject.other	Capacitance	en
dc.subject.other	Capacitors	en
dc.subject.other	Dielectric devices	en
dc.subject.other	Electric equipment	en
dc.subject.other	Electric properties	en
dc.subject.other	Hafnium	en
dc.subject.other	Hafnium compounds	en
dc.subject.other	MOS capacitors	en
dc.subject.other	Nanoelectronics	en
dc.subject.other	Nanotechnology	en
dc.subject.other	Oxide films	en
dc.subject.other	Oxide minerals	en
dc.subject.other	Oxides	en
dc.subject.other	Quartz	en
dc.subject.other	Silica	en
dc.subject.other	Silicon	en
dc.subject.other	Switching circuits	en
dc.subject.other	Silicon on insulator technology	en
dc.title	Deposition and electrical characterization of hafnium oxide films on silicon	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1002/pssc.200780208	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssc.200780208	en
heal.publicationDate	2008	en
heal.abstract	Hafnium oxide dielectric is under intense investigation in recent years as a new high-k insulator to replace silicon dioxide thus allowing further device scaling in silicon technology. In this work we investigate HfO2 deposited films using RF reactive sputtering technique and we present results on their electrical characterization using MOS capacitors. The HfO2 films have been sputtered on n or p-type Si substrate from high pu rity HfO 2 target at low deposition rate (0.1 A/s) monitored by a quartz crystal. After deposition of the insulator aluminum has been evaporated and patterned to form MIS capacitors. In this paper we investigate the effect of deposition parameters and post-deposition-annealing on the electrical properties of the HfO2 films. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,.	en
heal.journalName	Physica Status Solidi (C) Current Topics in Solid State Physics	en
dc.identifier.doi	10.1002/pssc.200780208	en
dc.identifier.volume	5	en
dc.identifier.issue	12	en
dc.identifier.spage	3720	en
dc.identifier.epage	3723	en