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Deposition and electrical characterization of hafnium oxide films on silicon

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dc.contributor.author Verrelli, E en
dc.contributor.author Tsoukalas, D en
dc.contributor.author Kouvatsos, D en
dc.date.accessioned 2014-03-01T02:45:13Z
dc.date.available 2014-03-01T02:45:13Z
dc.date.issued 2008 en
dc.identifier.issn 18626351 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/32212
dc.subject.other Deposited films en
dc.subject.other Deposition Parameters en
dc.subject.other Electrical characterizations en
dc.subject.other Electrical properties en
dc.subject.other Hafnium oxide dielectrics en
dc.subject.other Hafnium oxide films en
dc.subject.other Hfo2 films en
dc.subject.other Mis capacitors en
dc.subject.other Quartz crystals en
dc.subject.other RF reactive sputtering en
dc.subject.other Si substrates en
dc.subject.other Silicon dioxides en
dc.subject.other Silicon Technologies en
dc.subject.other Administrative data processing en
dc.subject.other Alumina en
dc.subject.other Capacitance en
dc.subject.other Capacitors en
dc.subject.other Dielectric devices en
dc.subject.other Electric equipment en
dc.subject.other Electric properties en
dc.subject.other Hafnium en
dc.subject.other Hafnium compounds en
dc.subject.other MOS capacitors en
dc.subject.other Nanoelectronics en
dc.subject.other Nanotechnology en
dc.subject.other Oxide films en
dc.subject.other Oxide minerals en
dc.subject.other Oxides en
dc.subject.other Quartz en
dc.subject.other Silica en
dc.subject.other Silicon en
dc.subject.other Switching circuits en
dc.subject.other Silicon on insulator technology en
dc.title Deposition and electrical characterization of hafnium oxide films on silicon en
heal.type conferenceItem en
heal.identifier.primary 10.1002/pssc.200780208 en
heal.identifier.secondary http://dx.doi.org/10.1002/pssc.200780208 en
heal.publicationDate 2008 en
heal.abstract Hafnium oxide dielectric is under intense investigation in recent years as a new high-k insulator to replace silicon dioxide thus allowing further device scaling in silicon technology. In this work we investigate HfO2 deposited films using RF reactive sputtering technique and we present results on their electrical characterization using MOS capacitors. The HfO2 films have been sputtered on n or p-type Si substrate from high pu rity HfO 2 target at low deposition rate (0.1 A/s) monitored by a quartz crystal. After deposition of the insulator aluminum has been evaporated and patterned to form MIS capacitors. In this paper we investigate the effect of deposition parameters and post-deposition-annealing on the electrical properties of the HfO2 films. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,. en
heal.journalName Physica Status Solidi (C) Current Topics in Solid State Physics en
dc.identifier.doi 10.1002/pssc.200780208 en
dc.identifier.volume 5 en
dc.identifier.issue 12 en
dc.identifier.spage 3720 en
dc.identifier.epage 3723 en


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