Effect of deposition pressure and post deposition annealing on SmCo thin film properties

Speliotis, Th; Makarona, E; Chouliaras, F; Charitidis, CA; Tsamis, C; Niarchos, D

dc.contributor.author	Speliotis, Th	en
dc.contributor.author	Makarona, E	en
dc.contributor.author	Chouliaras, F	en
dc.contributor.author	Charitidis, CA	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Niarchos, D	en
dc.date.accessioned	2014-03-01T02:45:14Z
dc.date.available	2014-03-01T02:45:14Z
dc.date.issued	2008	en
dc.identifier.issn	18626351	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32225
dc.subject	Thin Film	en
dc.subject.other	Annealing conditions	en
dc.subject.other	Annealing temperatures	en
dc.subject.other	Capping layers	en
dc.subject.other	Coercive fields	en
dc.subject.other	Coercivity	en
dc.subject.other	Dc magnetron sputtering	en
dc.subject.other	Deposition pressures	en
dc.subject.other	Film properties	en
dc.subject.other	In vacuums	en
dc.subject.other	Key factors	en
dc.subject.other	Post depositions	en
dc.subject.other	Remanence magnetizations	en
dc.subject.other	Si(100)	en
dc.subject.other	Smco films	en
dc.subject.other	Squareness ratios	en
dc.subject.other	Structural and magnetic properties	en
dc.subject.other	Annealing	en
dc.subject.other	Coercive force	en
dc.subject.other	Magnetic properties	en
dc.subject.other	Nanoelectronics	en
dc.subject.other	Nanotechnology	en
dc.subject.other	Remanence	en
dc.subject.other	Semiconducting silicon compounds	en
dc.subject.other	Silicon	en
dc.subject.other	Silicon wafers	en
dc.subject.other	Stoichiometry	en
dc.subject.other	Tantalum	en
dc.subject.other	Thick films	en
dc.subject.other	Thin films	en
dc.subject.other	Magnetic thin films	en
dc.title	Effect of deposition pressure and post deposition annealing on SmCo thin film properties	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1002/pssc.200780177	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssc.200780177	en
heal.publicationDate	2008	en
heal.abstract	In this article we report on the effect of the deposition pressure and the post deposition annealing conditions on the structural and magnetic properties of SmCo thin films deposited on Si(100) wafers employing Ta buffer and capping layers. The Ëlms were deposited by DC magnetron sputtering and annealed in vacuum at various temperatures. The films under investigation were isotropic with high remanence magnetization, maximum coercive field of 8 kOe and a squareness ratio of coercivity higher than 0.9. It was found that the Ar pressure during the deposition is a key factor in controlling the stoichiometry and the structural and magnetic properties of the SmCo films, while the effect of the annealing temperature is crucial in optimizing the magnetic properties of the films. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.	en
heal.journalName	Physica Status Solidi (C) Current Topics in Solid State Physics	en
dc.identifier.doi	10.1002/pssc.200780177	en
dc.identifier.volume	5	en
dc.identifier.issue	12	en
dc.identifier.spage	3759	en
dc.identifier.epage	3762	en