Hydrogen gas sensing application of Al/NiO Schottky diode

Stamataki, M; Sargentis, Ch; Tsamakis, D; Fasaki, I; Kompitsas, M

dc.contributor.author	Stamataki, M	en
dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Fasaki, I	en
dc.contributor.author	Kompitsas, M	en
dc.date.accessioned	2014-03-01T02:45:29Z
dc.date.available	2014-03-01T02:45:29Z
dc.date.issued	2008	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32275
dc.subject	Gas Sensor	en
dc.subject	Pulsed Laser Deposition	en
dc.subject	schottky diode	en
dc.subject	Thin Film	en
dc.subject.other	Electron-gun evaporation	en
dc.subject.other	Functionalized	en
dc.subject.other	Gas sensors	en
dc.subject.other	High-resistivity Si substrates	en
dc.subject.other	Hydrogen gas sensing	en
dc.subject.other	P-type Nio	en
dc.subject.other	Reactive pulsed laser deposition	en
dc.subject.other	Schottky diodes	en
dc.subject.other	Electron beams	en
dc.subject.other	Electron guns	en
dc.subject.other	Gas detectors	en
dc.subject.other	Hydrogen	en
dc.subject.other	Pulsed laser deposition	en
dc.subject.other	Schottky barrier diodes	en
dc.subject.other	Sensors	en
dc.subject.other	Semiconducting silicon compounds	en
dc.title	Hydrogen gas sensing application of Al/NiO Schottky diode	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICSENS.2008.4716572	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICSENS.2008.4716572	en
heal.identifier.secondary	4716572	en
heal.publicationDate	2008	en
heal.abstract	Undoped p-type NiO thin film has been developed on high resistivity Si substrates by reactive pulsed laser deposition technique (RPLD). Subsequently an Al/NiO Schottky diode has been fabricated by electron gun evaporation and was functionalized as H2 gas sensor. © 2008 IEEE.	en
heal.journalName	Proceedings of IEEE Sensors	en
dc.identifier.doi	10.1109/ICSENS.2008.4716572	en
dc.identifier.spage	843	en
dc.identifier.epage	846	en