Hydrogen gas sensors based on PLD grown NiO thin film structures

Stamataki, M; Tsamakis, D; Brilis, N; Fasaki, I; Giannoudakos, A; Kompitsas, M

dc.contributor.author	Stamataki, M	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Brilis, N	en
dc.contributor.author	Fasaki, I	en
dc.contributor.author	Giannoudakos, A	en
dc.contributor.author	Kompitsas, M	en
dc.date.accessioned	2014-03-01T02:45:29Z
dc.date.available	2014-03-01T02:45:29Z
dc.date.issued	2008	en
dc.identifier.issn	1862-6300	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32276
dc.subject	Gas Sensor	en
dc.subject	Thin Film	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Afm images	en
dc.subject.other	Air ambient	en
dc.subject.other	Deposition processes	en
dc.subject.other	Electrical and sensing properties	en
dc.subject.other	Electrical measurements	en
dc.subject.other	Electrical properties	en
dc.subject.other	Homojunctions	en
dc.subject.other	Hydrogen gas sensors	en
dc.subject.other	Nio films	en
dc.subject.other	NiO thin films	en
dc.subject.other	Oxygen pressures	en
dc.subject.other	Pulsed lasers	en
dc.subject.other	Resistance responses	en
dc.subject.other	Si substrates	en
dc.subject.other	Distillation	en
dc.subject.other	Electric properties	en
dc.subject.other	Hydrogen	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Oxygen	en
dc.subject.other	Pulsed laser applications	en
dc.subject.other	Pulsed laser deposition	en
dc.subject.other	Semiconducting silicon compounds	en
dc.subject.other	Sensor networks	en
dc.subject.other	Silicon	en
dc.subject.other	Solids	en
dc.subject.other	Thick films	en
dc.subject.other	Thin film devices	en
dc.subject.other	Thin films	en
dc.subject.other	Current voltage characteristics	en
dc.title	Hydrogen gas sensors based on PLD grown NiO thin film structures	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1002/pssa.200778914	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssa.200778914	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	NiO thin films were grown by pulsed laser deposition on (100)Si substrates at 200 degrees C temperature. The effect of the O-2 pressure during the deposition process on the morphological, electrical and sensing properties of the films has been investigated. AFM images showed that the surface morphology of NiO films can be modified by the oxygen pressure during deposition. Electrical measurements showed that the well-known native p-type conductivity exhibits a conversion from p-type to n-type when the O-2 pressure is reduced. Resistance responses of NiO-thin films towards hydrogen (H-2) flow in air ambient have been measured. NiO thin film p-n homojuctions were then fabricated to investigate the electrical properties of such structures. The p-n homojunctions exhibited the distinct rectifying current-voltage (I-V) characteristics. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (A) Applications and Materials Science	en
dc.identifier.doi	10.1002/pssa.200778914	en
dc.identifier.isi	ISI:000258863700070	en
dc.identifier.volume	205	en
dc.identifier.issue	8	en
dc.identifier.spage	2064	en
dc.identifier.epage	2068	en