dc.contributor.author |
Stamataki, M |
en |
dc.contributor.author |
Tsamakis, D |
en |
dc.contributor.author |
Brilis, N |
en |
dc.contributor.author |
Fasaki, I |
en |
dc.contributor.author |
Giannoudakos, A |
en |
dc.contributor.author |
Kompitsas, M |
en |
dc.date.accessioned |
2014-03-01T02:45:29Z |
|
dc.date.available |
2014-03-01T02:45:29Z |
|
dc.date.issued |
2008 |
en |
dc.identifier.issn |
1862-6300 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/32276 |
|
dc.subject |
Gas Sensor |
en |
dc.subject |
Thin Film |
en |
dc.subject.classification |
Materials Science, Multidisciplinary |
en |
dc.subject.classification |
Physics, Applied |
en |
dc.subject.classification |
Physics, Condensed Matter |
en |
dc.subject.other |
Afm images |
en |
dc.subject.other |
Air ambient |
en |
dc.subject.other |
Deposition processes |
en |
dc.subject.other |
Electrical and sensing properties |
en |
dc.subject.other |
Electrical measurements |
en |
dc.subject.other |
Electrical properties |
en |
dc.subject.other |
Homojunctions |
en |
dc.subject.other |
Hydrogen gas sensors |
en |
dc.subject.other |
Nio films |
en |
dc.subject.other |
NiO thin films |
en |
dc.subject.other |
Oxygen pressures |
en |
dc.subject.other |
Pulsed lasers |
en |
dc.subject.other |
Resistance responses |
en |
dc.subject.other |
Si substrates |
en |
dc.subject.other |
Distillation |
en |
dc.subject.other |
Electric properties |
en |
dc.subject.other |
Hydrogen |
en |
dc.subject.other |
Nanostructured materials |
en |
dc.subject.other |
Oxygen |
en |
dc.subject.other |
Pulsed laser applications |
en |
dc.subject.other |
Pulsed laser deposition |
en |
dc.subject.other |
Semiconducting silicon compounds |
en |
dc.subject.other |
Sensor networks |
en |
dc.subject.other |
Silicon |
en |
dc.subject.other |
Solids |
en |
dc.subject.other |
Thick films |
en |
dc.subject.other |
Thin film devices |
en |
dc.subject.other |
Thin films |
en |
dc.subject.other |
Current voltage characteristics |
en |
dc.title |
Hydrogen gas sensors based on PLD grown NiO thin film structures |
en |
heal.type |
conferenceItem |
en |
heal.identifier.primary |
10.1002/pssa.200778914 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1002/pssa.200778914 |
en |
heal.language |
English |
en |
heal.publicationDate |
2008 |
en |
heal.abstract |
NiO thin films were grown by pulsed laser deposition on (100)Si substrates at 200 degrees C temperature. The effect of the O-2 pressure during the deposition process on the morphological, electrical and sensing properties of the films has been investigated. AFM images showed that the surface morphology of NiO films can be modified by the oxygen pressure during deposition. Electrical measurements showed that the well-known native p-type conductivity exhibits a conversion from p-type to n-type when the O-2 pressure is reduced. Resistance responses of NiO-thin films towards hydrogen (H-2) flow in air ambient have been measured. NiO thin film p-n homojuctions were then fabricated to investigate the electrical properties of such structures. The p-n homojunctions exhibited the distinct rectifying current-voltage (I-V) characteristics. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
en |
heal.publisher |
WILEY-V C H VERLAG GMBH |
en |
heal.journalName |
Physica Status Solidi (A) Applications and Materials Science |
en |
dc.identifier.doi |
10.1002/pssa.200778914 |
en |
dc.identifier.isi |
ISI:000258863700070 |
en |
dc.identifier.volume |
205 |
en |
dc.identifier.issue |
8 |
en |
dc.identifier.spage |
2064 |
en |
dc.identifier.epage |
2068 |
en |