Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots

Arpatzanis, N; Hastas, NA; Dimitriadis, CA; Charitidis, C; Song, JD; Choi, WJ; Lee, JI

dc.contributor.author	Arpatzanis, N	en
dc.contributor.author	Hastas, NA	en
dc.contributor.author	Dimitriadis, CA	en
dc.contributor.author	Charitidis, C	en
dc.contributor.author	Song, JD	en
dc.contributor.author	Choi, WJ	en
dc.contributor.author	Lee, JI	en
dc.date.accessioned	2014-03-01T02:45:30Z
dc.date.available	2014-03-01T02:45:30Z
dc.date.issued	2008	en
dc.identifier.issn	18626351	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32278
dc.subject	schottky diode	en
dc.subject	Quantum Dot	en
dc.subject.other	Capping layers	en
dc.subject.other	Discrete traps	en
dc.subject.other	Gaussian energy distributions	en
dc.subject.other	Ideality factors	en
dc.subject.other	Inas quantum dots	en
dc.subject.other	Low-frequency noises	en
dc.subject.other	Noise sources	en
dc.subject.other	Reverse biases	en
dc.subject.other	Reverse currents	en
dc.subject.other	Schottky contacts	en
dc.subject.other	Schottky diodes	en
dc.subject.other	Trap distributions	en
dc.subject.other	Trap properties	en
dc.subject.other	Uniformly distributed	en
dc.subject.other	Acoustic noise	en
dc.subject.other	Activation analysis	en
dc.subject.other	Activation energy	en
dc.subject.other	Gallium alloys	en
dc.subject.other	Gold alloys	en
dc.subject.other	Indium arsenide	en
dc.subject.other	Nanoelectronics	en
dc.subject.other	Nanotechnology	en
dc.subject.other	Optical waveguides	en
dc.subject.other	Quantum electronics	en
dc.subject.other	Schottky barrier diodes	en
dc.subject.other	Semiconducting gallium	en
dc.subject.other	Semiconducting indium	en
dc.subject.other	Semiconductor quantum dots	en
dc.title	Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1002/pssc.200780113	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssc.200780113	en
heal.publicationDate	2008	en
heal.abstract	The trap properties of Au/n-GaAs Schorttky diodes with embedded InAs quantum dots (QDs) and different ideality factors were studied by capacHance-voltage (C-V) and low-frequency noise (LFNl measurements in the reverse bias regime. The reverse current noise spectra show I/f behaviour and g-r noise, attributed to uniformly distributed traps in energy or to a discrete trap level in the energy hand-gap of the GaAs capping layer, respectively. The Schottky contact performance or characteristics is closely related with the level of these noise sources. The C-V characteristics indicate the existence of trap with Gaussian energy distribution in the GaAs capping layer and in the InAs QDs layer. From analysis of the C-V characteristics, the density and the activation energy of these trap distributions are determined. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.	en
heal.journalName	Physica Status Solidi (C) Current Topics in Solid State Physics	en
dc.identifier.doi	10.1002/pssc.200780113	en
dc.identifier.volume	5	en
dc.identifier.issue	12	en
dc.identifier.spage	3617	en
dc.identifier.epage	3621	en