Investigation of top gate electrode options for high-k gate dielectric MOS capacitors

Moschou, DC; Verrelli, E; Kouvatsos, DN; Normand, P; Tsoukalas, D; Speliotis, A; Bayiati, P; Niarchos, D

dc.contributor.author	Moschou, DC	en
dc.contributor.author	Verrelli, E	en
dc.contributor.author	Kouvatsos, DN	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Speliotis, A	en
dc.contributor.author	Bayiati, P	en
dc.contributor.author	Niarchos, D	en
dc.date.accessioned	2014-03-01T02:45:31Z
dc.date.available	2014-03-01T02:45:31Z
dc.date.issued	2008	en
dc.identifier.issn	18626351	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32291
dc.subject.other	Gate electrodes	en
dc.subject.other	Gate insulators	en
dc.subject.other	Gate materials	en
dc.subject.other	Low temperatures	en
dc.subject.other	Optimum performances	en
dc.subject.other	Top gates	en
dc.subject.other	Variations of	en
dc.subject.other	Capacitance	en
dc.subject.other	Capacitors	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Dielectric devices	en
dc.subject.other	Electric equipment	en
dc.subject.other	Electrolysis	en
dc.subject.other	Electrolytic capacitors	en
dc.subject.other	Gate dielectrics	en
dc.subject.other	Gates (transistor)	en
dc.subject.other	Hafnium compounds	en
dc.subject.other	Ion bombardment	en
dc.subject.other	Ion implantation	en
dc.subject.other	Nanoelectronics	en
dc.subject.other	Nanotechnology	en
dc.subject.other	Polysilicon	en
dc.subject.other	Refractory metal compounds	en
dc.subject.other	Voltage measurement	en
dc.subject.other	MOS capacitors	en
dc.title	Investigation of top gate electrode options for high-k gate dielectric MOS capacitors	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1002/pssc.200780147	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssc.200780147	en
heal.publicationDate	2008	en
heal.abstract	Capacitors with a high-k HfO2 film as gate dielectric were fabricated, using three different variations for the top gate electrode. This way it was possible to acquire important information on which kind of gate material should be used in combination with HfO2 as a gate insulator for optimum performance of possible low temperature applications, such as high-k TFTs. The variations of gate electrode were e-gun evaporated Al, sputtered W and CVD polysilicon followed by ion implantation and annealing. The capacitors were then characterized with capacitance-voltage measurements and current-voltage measurements. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.	en
heal.journalName	Physica Status Solidi (C) Current Topics in Solid State Physics	en
dc.identifier.doi	10.1002/pssc.200780147	en
dc.identifier.volume	5	en
dc.identifier.issue	12	en
dc.identifier.spage	3626	en
dc.identifier.epage	3629	en