A modeling of the retention characteristics of non-volatile memories embedded with metallic nanoparticles

Beniakar, M; Sargentis, Ch; Xanthakis, JP; Anastassopoulos, A; Kladas, A; Tsamakis, D

dc.contributor.author	Beniakar, M	en
dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Xanthakis, JP	en
dc.contributor.author	Anastassopoulos, A	en
dc.contributor.author	Kladas, A	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T02:45:54Z
dc.date.available	2014-03-01T02:45:54Z
dc.date.issued	2009	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32447
dc.subject	Finite Element Method	en
dc.subject	Non Volatile Memory	en
dc.subject	poisson equation	en
dc.subject	Three Dimensional	en
dc.subject	Transmission Coefficient	en
dc.subject	First Order	en
dc.title	A modeling of the retention characteristics of non-volatile memories embedded with metallic nanoparticles	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2009.5378099	en
heal.identifier.secondary	5378099	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2009.5378099	en
heal.publicationDate	2009	en
heal.abstract	In this paper, three dimensional calculations of the potential distribution inside previously fabricated non-volatile memory (NVM) devices consisting of platinum nanoparticles (NPs) embedded in the SiO2/HfO2 matrix were performed to examine whether the barrier for tunneling is seriously affected by the discharge of one electron from one of the metallic NPs. To do this, the Poisson equation inside the device	en
heal.journalName	2009 International Semiconductor Device Research Symposium, ISDRS '09	en
dc.identifier.doi	10.1109/ISDRS.2009.5378099	en